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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
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Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe

机译：基于多晶硅SiGe的太阳能电池器件性能与晶界结构构型的关系

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摘要

The grain boundary character distribution of multicrystalline SiGe (mc-SiGe) solar cells with microscopic compositional distribution was revealed to have a significant effect on the photovoltaic performance of solar cells. This was clarified by comparing the photovoltaic performance of small-area (≈0.02 cm~2) solar cells fabricated in a large-area solar cell with their local structures. With increasing fraction of random grain boundaries in a small-area solar cell, the conversion efficiency was found to decrease. On the other hand, Σ3 grain boundaries are found to be dominant in a solar cell with good performance. These results suggest that the development of a crystal growth technique that fully controls the grain boundary character distribution is the key to improving the conversion efficiency of the solar cell based on multicrystalline semiconductors.
机译：结果表明，具有微观组成​​分布的多晶SiGe（mc-SiGe）太阳能电池的晶界特征分布对太阳能电池的光伏性能具有重要影响。通过比较在大面积太阳能电池中制造的小面积（≈0.02cm〜2）太阳能电池的光伏性能及其局部结构，可以弄清这一点。随着小面积太阳能电池中随机晶界的增加，发现转换效率降低。另一方面，发现在具有良好性能的太阳能电池中占主导地位的是Σ3晶界。这些结果表明，完全控制晶界特征分布的晶体生长技术的发展是提高基于多晶半导体的太阳能电池的转换效率的关键。

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