Surface Characterization of 3C-SiC Exposed to XeF_2

Morimichi WATANABE; Yukimasa MORI; Hiroaki SAKAI; Takashi IIDA; Shunsuke KOIDE; Eri MAETA; Kyoichi SAWABE; Kosuke SHOBATAKE

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Surface Characterization of 3C-SiC Exposed to XeF_2

机译：XeF_2暴露的3C-SiC的表面表征

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Poly crystalline cubic silicon carbide (3C-SiC) surfaces exposed to XeF_2 vapor at 1.8 x 10~(-4) Torr at sample temperatures ranging from T_s = 300 to 800 K have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning Auger microscopy (SAM). Above T_s = 520 K, SiC surface reacts with XeF_2 forming volatile SiF4 and a reaction layer that is mainly composed of partially fluorinated C species. As T_s is raised, the reaction layer becomes thicker. The exposure time dependence of the thickness of the reaction layer measured at T_s = 800 K gave a rate constant for layer formation as 1.1 μm · h~(-1).

机译：使用X射线光电子能谱（XPS）和扫描对表征的多晶立方碳化硅（3C-SiC）表面在Txs = 300至800 K的样品温度下以1.8 x 10〜（-4）Torr暴露于XeF_2蒸气进行了表征俄歇显微镜（SAM）。当T_s = 520 K以上时，SiC表面与XeF_2反应形成挥发性SiF4，并形成主要由部分氟化的C类物质组成的反应层。随着T_s的升高，反应层变厚。在T_s ＝ 800K下测得的反应层厚度的暴露时间依赖性给出了层形成的速率常数为1.1μm·h〜（-1）。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters》 |2004年第3apt2期|p.L346-L348|共3页
作者
Morimichi WATANABE; Yukimasa MORI; Hiroaki SAKAI; Takashi IIDA; Shunsuke KOIDE; Eri MAETA; Kyoichi SAWABE; Kosuke SHOBATAKE;
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作者单位

Materials Research Laboratory, NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan;

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正文语种 eng
中图分类应用物理学;
关键词
silicon carbide; xenon difluoride; XPS; SEM; AES; SAM; quadrupole mass spectrometer;

机译：碳化硅;二氟化氙;XPS;SEM;AES;SAM;四极质谱仪;

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Surface Characterization of 3C-SiC Exposed to XeF_2

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