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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Er~(3+) Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere
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Er~(3+) Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere

机译:氧气氛中Si:Er靶的激光烧蚀沉积的掺Er富硅氧化硅膜的Er〜(3+)光致发光

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摘要

We have developed a new pulsed laser deposition method for fabricating Er-doped silicon-rich silicon oxide (SRSO:Er) films. A target composed of a pure Si disk and an Er metal strip was ablated by a line-focused laser beam in oxygen atmosphere. The oxygen concentration that determines the relative concentrations of the three phases (Si-Si, SiO_x, and SiO_2) in the film was easily controlled by varying the ambient oxygen pressure. The photoluminescence intensity at 1.54 μm from Er~(3+) ions was strongly dependent on the amount of the Si-Si phase in the SRSO:Er films.
机译:我们已经开发出一种新的脉冲激光沉积方法,用于制造掺Er的富硅氧化硅(SRSO:Er)膜。在氧气气氛中通过线聚焦激光束烧蚀由纯Si盘和Er金属带组成的靶。通过改变环境氧气压力可以很容易地控制确定薄膜中三相(Si-Si,SiO_x和SiO_2)相对浓度的氧气浓度。 Er〜(3+)离子在1.54μm处的光致发光强度很大程度上取决于SRSO:Er膜中Si-Si相的数量。

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