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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Design of Sequential Lateral Solidification Crystallization Method for Low Temperature Poly-Si Thin Film Transistors
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Design of Sequential Lateral Solidification Crystallization Method for Low Temperature Poly-Si Thin Film Transistors

机译：低温多晶硅薄膜晶体管的顺序横向凝固结晶方法设计

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摘要

Sequential lateral solidification (SLS) is known as a promising method for making low-temperature poly-Si thin film transistors (LTPS TFT) with superior performance for the fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display (LCD) and TFT organic light Emitting diode (OLED). In this work we studied the dependence of TFT characteristics on SLS poly-Si grain width and suggested the methods of designing SLS mask pattern to achieve uniform TFT performance. We varied the width of the poly-Si grain by employing the 2-shot SLS mask pattern with different overlaps between the 1st and 2nd laser pulses. The width of the poly-Si grain decreased with decreasing the overlap. However, the measured TFT characteristics revealed that the width of the poly-Si grain negligibly influences the device properties. We could achieve the TFT mobility of approximately 350 cm~2/V·s for the overlap of not less than 1 μm. We suggested that the SLS mask pattern (x, y) should be designed such that 2 + y ≤ x < 2 (C-SLG distance) and y > (optical resolution), where x is the spacing of the laser-absorbed region and y is the spacing of the laser-nonabsorbed region on the substrate.
机译：顺序横向固化（SLS）是一种有前途的制造低温多晶硅薄膜晶体管（LTPS TFT）的有前途的方法，该技术可用于制造高度集成电路的平板显示器，例如TFT液晶显示器（LCD） TFT有机发光二极管（OLED）。在这项工作中，我们研究了TFT特性对SLS多晶硅晶粒宽度的依赖性，并提出了设计SLS掩模图案以实现均匀TFT性能的方法。我们通过采用在第一和第二激光脉冲之间具有不同重叠的2脉冲SLS掩模图案来改变多晶硅晶粒的宽度。多晶硅晶粒的宽度随着重叠的减小而减小。然而，测量的TFT特性表明，多晶硅晶粒的宽度对器件性能的影响可忽略不计。对于不小于1μm的重叠，我们可以实现约350 cm〜2 / V·s的TFT迁移率。我们建议SLS掩模图案（x，y）的设计应使2 + y≤x <2（C-SLG距离）和y>（光学分辨率），其中x是激光吸收区域的间距， y是衬底上未被激光吸收的区域的间距。

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