Nanometer Trench Fabricated by Atomic Force Microscopy

Tokio YUKIYA; Kouji AIZAWA; Chugo FUJIHASHI

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Nanometer Trench Fabricated by Atomic Force Microscopy

机译：原子力显微镜制作的纳米沟槽

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Nanometer trenches were successfully produced by NaOH etching of the Ti oxide lines produced by atomic force microscopy (AFM) anodization on Ti thin films of 6 nm thickness on Si thermal oxidation films. The full width at half maximum (FWHM) of a nanometer trench is estimated to be approximately 20 nm, which is comparable to the radius of curvature of the AFM cantilever. It is found that the etching rate of the Ti oxide lines produced by AFM anodization depends on oxide lines height. The selection ratio of etching rate of the Ti thin film and oxide lines is 10 for oxide lines of 2 nm height, the etching rates being approximately 0.08 and 0.87 nm/min, respectively. Ti nanometer wires having 20 nm FWHM could be formed from two nanometer trenches placed close together in parallel.

机译：通过NaOH蚀刻在Si热氧化膜上的6 nm厚度的Ti薄膜上通过原子力显微镜（AFM）阳极氧化产生的Ti氧化线，成功地制造了纳米沟槽。纳米沟槽的半峰全宽（FWHM）估计约为20 nm，这与AFM悬臂的曲率半径相当。发现通过AFM阳极氧化产生的Ti氧化物线的蚀刻速率取决于氧化物线的高度。对于2nm高的氧化物线，Ti薄膜和氧化物线的蚀刻速率的选择比为10，蚀刻速率分别为约0.08和0.87nm / min。可以由平行放置在一起的两个纳米沟槽形成具有20 nm FWHM的Ti纳米线。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters》 |2004年第4apt1期|p.1660-1665|共6页
作者
Tokio YUKIYA; Kouji AIZAWA; Chugo FUJIHASHI;
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作者单位

Department of Electronics and Computer Engineering, Tokyo Polytechnic University, Iiyama 1583, Atsugi City, Kanagawa 243-0297, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
AFM; nano gap; slit; trench; local oxidation; anodization;

机译：原子力显微镜纳米间隙狭缝沟槽局部氧化阳极氧化;

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6. Characterization of Nanoscale Transformations in Polyelectrolyte Multilayers Fabricated from Plasmid DNA Using Laser Scanning Confocal Microscopy in Combination with Atomic Force Microscopy [O] . Nathaniel J. Fredin, Ryan M. Flessner, Christopher M. Jewell, -1

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Nanometer Trench Fabricated by Atomic Force Microscopy

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