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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Boron Doping for p-Type β-FeSi_2 Films by Sputtering Method
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Boron Doping for p-Type β-FeSi_2 Films by Sputtering Method

机译：溅射法对p型β-FeSi_2薄膜进行硼掺杂

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摘要

High quality epitaxial β-FeSi_2 thin films prepared by alternate Fe/Si multilayers stacking were doped for p-type by co-sputtering of silicon and boron, in which elemental boron chips were placed on silicon target. The starting β-FeSi_2 films before doping were n-type with residual electron concentration of about 2 x 10~(17) cm~(-3) and mobility of about 200cm~2/V·s. After doping with boron, β-FeSi_2 films showed the same epitaxial crystallinity with continuous structure as that of non-doped one. Doping level of p-type β-FeSi_2 films with net hole concentration from 3 x 10~(17) to 1 x 10~(19) cm~(-3) and mobility from 100 to 20cm~2/V·s were successfully achieved. Desired net hole concentration was obtained by varying the area ratio of boron chips on silicon target.
机译：通过交替溅射硅和硼，将元素硼芯片放置在硅靶上，将通过交替Fe / Si多层堆叠制备的高质量外延β-FeSi_2薄膜掺杂为p型。掺杂前的起始β-FeSi_2薄膜为n型，剩余电子浓度约为2 x 10〜（17）cm〜（-3），迁移率约为200cm〜2 / V·s。掺硼后，β-FeSi_2薄膜的外延结晶性与未掺杂的相同，具有连续的结构。净空穴浓度从3 x 10〜（17）到1 x 10〜（19）cm〜（-3），迁移率从100到20cm〜2 / V·s的p型β-FeSi_2薄膜的掺杂水平成功实现。通过改变硅靶上硼片的面积比，可获得所需的净空穴浓度。

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