Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures

Kun-Ming CHEN; Hsin-Hui Hu; Guo-Wei HUANG; Wen-Kuan YEH; Chun-Yen CHANG

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Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures

机译：在各种温度下从线性区域到饱和区域工作的部分耗尽SOI MOSFET的低频噪声

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The low-frequency noise characteristics of partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) in silicon-on-insulator technology at various temperatures were investigated. For floating-body devices, a Lorentzian-like noise overshoot is observed due to the floating-body effect. The noise overshoot is dependent on temperature and bias, and can be reduced using a source-to-body-connected structure. At high temperature or high drain bias, the 1/f noise will be observed, and it is temperature-independent due to the trap-induced mobility fluctuation in the channel.

机译：研究了绝缘体上硅技术在不同温度下部分耗尽的金属氧化物半导体场效应晶体管（MOSFET）的低频噪声特性。对于浮体设备，由于浮体效应，会观察到类似洛伦兹噪声的过冲。噪声过冲取决于温度和偏置，可以使用源到体连接的结构来降低。在高温或高漏极偏置下，将观察到1 / f噪声，并且由于沟道中陷阱引起的迁移率波动而与温度无关。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters》 |2004年第4bpt1期|p.2188-2189|共2页
作者
Kun-Ming CHEN; Hsin-Hui Hu; Guo-Wei HUANG; Wen-Kuan YEH; Chun-Yen CHANG;
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作者单位

National Nano Device Laboratories, Hsinchu 300, Taiwan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
low-frequency noise; SOI MOSFET; floating-body effect; temperature; mobility fluctuation;

机译：低频噪声;SOI MOSFET;浮体效应;温度;迁移率波动;

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专利

1. Effect of starting SOI material quality on low-frequency noise characteristics in partially depleted floating-body SOI MOSFETs [J] . Ushiki T., Ishino H. IEEE Electron Device Letters . 2000,第12期

机译：SOI初始材料质量对部分耗尽的浮体SOI MOSFET的低频噪声特性的影响
2. Shrinking from 0.25 down to 0.12 μm SOI CMOS technology node: a contribution to low-frequency noise in partially depleted N-MOSFETs [J] . F. Dieudonne, S. Haendler, J. Jomaah, Solid-State Electronics . 2003,第7期

机译：从0.25缩小至0.12μmSOI CMOS技术节点：部分耗尽的N-MOSFET对低频噪声的贡献
3. Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs [J] . S. Haendler, F. Dieudonne, J. Jomaah Solid-State Electronics . 2002,第7期

机译：前氧化物质量对部分耗尽和完全耗尽的SOI N-MOSFET的瞬态效应和低频噪声的影响
4. On the low-frequency noise and hot-carrier reliability in 0.13 /spl mu/m Partially depleted SOI MOSFETs [C] . Dieudonne, F., Jomaah, . 2003

机译：0.13 / spl mu / m部分耗尽SOI MOSFET的低频噪声和热载流子可靠性
5. Area efficient body contact for partially depleted silicon-on-insulator (SOI) MOSFETs. [D] . Daghighi, Arash. 2004

机译：适用于部分耗尽型绝缘体上硅（SOI）MOSFET的面积有效体接触。
6. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime [O] . Yasuhisa Omura 2019

机译：面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
7. Low-frequency noise of a Dual-Gate MOSFET in linear region [O] . Mirjana Videnovic-Misic, Milan Jevtic, Laslo Nadj 2006

机译：线性区域双栅极MOSFET的低频噪声

Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures

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