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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >A Low-Dielectric-Constant Sr_2(Ta_(1-x)Nb_x)_2O_7 Thin Film Controlling the Crystal Orientation on an IrO_2 Substrate for One-Transistor-Type Ferroelectric Memory Device
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A Low-Dielectric-Constant Sr_2(Ta_(1-x)Nb_x)_2O_7 Thin Film Controlling the Crystal Orientation on an IrO_2 Substrate for One-Transistor-Type Ferroelectric Memory Device

机译：低介电常数Sr_2（Ta_（1-x）Nb_x）_2O_7薄膜控制用于单晶体管型铁电存储设备的IrO_2衬底上的晶体取向

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摘要

The compounds of the Sr_2Nb_2O_7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr_2(Ta_(1-x),Nb_x)_2O_7 (STN) film formation technology, which can be applied to a floating-gate-type ferroelectric random access memory (FFRAM), has been developed. Furthermore, a new technology that controls the orientation and the properties (a low dielectric constant and large coercive field) of STN has been developed. An MFMIS structure device with a large memory bias window (1.3V) under +-5V operation and a long retention time (>10h) has successfully been fabricated.
机译：Sr_2Nb_2O_7（SNO）族的化合物适合用作铁电存储场效应晶体管（FET）的铁电材料，因为这些物质具有低介电常数和高耐热性。已经开发出可以应用于浮栅型铁电随机存取存储器（FFRAM）的非常低的介电常数铁电Sr_2（Ta_（1-x），Nb_x）_2O_7（STN）成膜技术。此外，已经开发了控制STN的取向和性质（低介电常数和大矫顽场）的新技术。已经成功制造了在+ -5V操作下具有大存储偏置窗口（1.3V）和长保留时间（> 10h）的MFMIS结构器件。

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