Data Retention Improvement of Metal-Oxide-Nitride-Oxide-Semiconductor Memories Using Silicon-Tetrachloride-Based Silicon Nitride with Ultralow Si-H Bond Density

Kazumasa NOMOTO; Goh ASAYAMA; Toshio KOBAYASHI

首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Data Retention Improvement of Metal-Oxide-Nitride-Oxide-Semiconductor Memories Using Silicon-Tetrachloride-Based Silicon Nitride with Ultralow Si-H Bond Density

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Data Retention Improvement of Metal-Oxide-Nitride-Oxide-Semiconductor Memories Using Silicon-Tetrachloride-Based Silicon Nitride with Ultralow Si-H Bond Density

机译：使用具有超低Si-H键密度的四氯化硅基氮化硅改善金属氧化物-氮化物-氧化物-半导体存储器的数据保留

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摘要

We have improved the data retention of metal-oxide-nitride-oxide-semiconductor (MONOS) memories by reducing the Si-H bond density in silicon nitride. This marked improvement was achieved by depositing silicon nitride with NH_3 and SiCl_4 (silicon tetrachloride, STC), instead of with NH_3 and the conventionally used SiCl_2H_2 (dichlorosilane, DCS). The Si-H bond density of the STC-based nitride was less than 1% that of the DCS-based nitride. We clarified that the improvement was due to the suppression of the leakage of trapped electrons through shallow traps which are related to Si-H bonds with an activation energy of 0.1-0.2 eV.

机译：通过降低氮化硅中的Si-H键密度，我们提高了金属氧化物，氮化物，氧化物半导体（MONOS）存储器的数据保留能力。通过用NH_3和SiCl_4（四氯化硅，STC）而不是NH_3和常规使用的SiCl_2H_2（二氯硅烷，DCS）沉积氮化硅，可以实现这种显着改善。 STC基氮化物的Si-H键密度小于DCS基氮化物的1％。我们明确指出，这种改进是由于抑制了电子通过浅陷阱捕获的电子泄漏所致，这些浅陷阱与活化能为0.1-0.2 eV的Si-H键有关。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters》 |2004年第4bpt1期|p.2211-2216|共6页
作者
Kazumasa NOMOTO; Goh ASAYAMA; Toshio KOBAYASHI;
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作者单位

Heneda Tec., Sony Fusion Domain Laboratory, 5-21-15 Higashikojiya Ota-ku, Tokyo 144-0033, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
silicon nitride; MONOS; data retention; Si-H bonds; silicon tetrachloride;

机译：氮化硅;MONOS;数据保留;Si-H键;四氯化硅;

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专利

1. Endurance and Data Retention Improvement of Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Semiconductor Memory Devices with Partially Bottom-Silicon-Rich Nitride Structure [J] . Hua-Ching Chien, Kuo-Hong Wu, Jui-Wen Chang, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第9A期

机译：具有部分底部-富含硅的氮化物结构的氧化硅-氮化物-氧化物-硅-非易失性半导体存储器件的耐久性和数据保留性能的提高
2. Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO_2 layer of a metal-oxide-nitride-oxide-semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal-oxide-nitride-oxide-semiconductor memories [J] . Shirakawa Hiroki, Araidai Masaaki, Kamiya Katsumasa, Japanese journal of applied physics . 2018,第8期

机译：金属氧化物-氮化物-氧化物-半导体存储器的SiO_2层中O空位与N和H原子的络合物的原子行为的理论研究：金属氧化物-氮化物-氧化物-氧化物中不可逆阈值电压偏移的物理起源半导体存储器
3. Retention Reliability Improvement of Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory with N_2O Oxidation Tunnel Oxide [J] . Jia-Lin Wu, Chin-Hsing Kao, Hua-Ching Chine, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第10Apt1期

机译：N_2O氧化隧道氧化物可提高氧化硅-氮化物-氧化硅-硅非易失性存储器的保留可靠性
4. Vibrational Stretching Modes of the Si-H and Si-D Bonds in Amorphous Silicon Nitride [C] . Shu-Ya Lin Symposium on Amorphous and Heterogeneous Silicon-Based Films-2001, Apr 16-20, 2001, San Francisco, California . 2001

机译：非晶氮化硅中Si-H和Si-D键的振动拉伸模式
5. Polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memory devices design, fabrication and characterization. [D] . Bu, Jiankang. 2001

机译：多晶硅-氮氧化物-氧化硅（SONOS）非易失性半导体存储器件的设计，制造和表征。
6. Recovery rate data for silicon nitride nanoparticle isolation using sodium polytungstate density gradients [O] . J. Patel, S. Lal, S.P. Wilshaw, 2018

机译：使用聚钨酸钠密度梯度分离氮化硅纳米颗粒的回收率数据
7. Charge Retention Improvement of Nonvolatile Radiation Sensor Using Metalndash;Oxidendash;Nitridendash;Oxidendash;Silicon with Si-Rich Nitride and Oxy-Nitride as Stack Charge-Trapping Layer [O] . 2016

机译：使用具有富含Si氮化物和氧 - 氮化物的金属氧化物 - 氮化物氧化物 - 氧化物和氧 - 氮化物作为堆叠电荷捕获层的电荷改善非挥发性辐射传感器
8. Effect of Temperature on Data Retention of SNOS(Silicon Nitride Oxide Semiconductor) Transistors [R] . Miller, S. L. 1986

机译：温度对sNOs（氮化硅半导体）晶体管数据保持的影响

Data Retention Improvement of Metal-Oxide-Nitride-Oxide-Semiconductor Memories Using Silicon-Tetrachloride-Based Silicon Nitride with Ultralow Si-H Bond Density

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