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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Crystal Orientation Change of Ni Films by Sputtering in Ar-N_2 Mixed Gases
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Crystal Orientation Change of Ni Films by Sputtering in Ar-N_2 Mixed Gases

机译：在Ar-N_2混合气体中溅射Ni膜的晶体取向变化

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Changing the crystal orientation of Ni films by the effect of reactive gas is attempted. It is known that (111)-oriented Ni film is usually obtained by sputtering in pure Ar gas. However, we report that almost single-oriented (100) Ni films are prepared by rf sputtering when a small amount of N_2 (1% < N_2 flow ratio < 7%) is mixed with Ar gas. By electrical resistivity measurement and Auger electron spectroscopy (AES), the presence of nitrogen in the (100) Ni films is not observed. Consequently, it is found that nitrogen influences the crystal orientation at the growing film surface but is not incorporated into the films. This enables us to prepare Ni films with either (111) orientation or (100) orientation by sputtering in a controlled manner without a postannealing process.
机译：试图通过反应气体的作用来改变Ni膜的晶体取向。已知通常通过在纯Ar气中溅射获得（111）取向的Ni膜。然而，我们报告说，当少量的N_2（1％

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