Investigation of analytical model of turn-off loss for 4H-SiC high-voltage trench insulated gate bipolar transistors

Liu Yan-juan; Wang Ying; Fang Jun-peng

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Investigation of analytical model of turn-off loss for 4H-SiC high-voltage trench insulated gate bipolar transistors

机译：4H-SiC高压沟槽绝缘栅双极型晶体管关断损耗分析模型的研究

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In this paper, an analytical model of 4H-SiC high-voltage trench insulated gate bipolar transistors (IGBTs) turn-off loss is developed for a given operating condition and validated with a two-dimensional numerical simulation without experimental conditions. Moreover, the hole-carrier concentration profile is also modeled. The simulation results demonstrated that the analytical model is correct within an acceptable range. It has been verified that the analytical model matches well with simulation results with increasing carrier lifetime in the N-drift region. (C) 2018 The Japan Society of Applied Physics

机译：本文针对给定的工作条件建立了4H-SiC高压沟槽绝缘栅双极型晶体管（IGBT）关断损耗的分析模型，并在没有实验条件的情况下进行了二维数值模拟验证。此外，还对空穴载流子浓度分布进行了建模。仿真结果表明，该分析模型在可接受的范围内是正确的。已经证实，随着N漂移区中载流子寿命的增加，分析模型与仿真结果非常吻合。（C）2018日本应用物理学会

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来源
《Japanese journal of applied physics》 |2018年第12期|124102.1-124102.6|共6页
作者
Liu Yan-juan; Wang Ying; Fang Jun-peng;
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Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Heilongjiang, Peoples R China;

Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China;

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专利

1. Investigation of 4H-SiC insulated-gate bipolar transistor turn-off performance for achieving low power loss [J] . Navarro Dondee, Pesic Iliya, Morikawa Yoji, Japanese journal of applied physics . 2016,第4s期

机译：实现低功耗的4H-SiC绝缘栅双极型晶体管关断性能研究
2. A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer [J] . Bin Zhang, Dazhong Zhu, Fang Liu, IEICE Electronics Express . 2013,第21期

机译：具有扩散剩余层的新型高压沟槽栅绝缘栅双极晶体管
3. Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors [J] . Tetsuya Miyazawa, Koji Nakayama, Atsushi Tanaka, Journal of Applied Physics . 2015,第8期

机译：超高压绝缘栅双极晶体管的多层多层4H-SiC的外延生长和表征
4. Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT) [C] . Lin Zhu, Santosh Balachandran, T. Paul Chow European Conference on Silicon Carbide and Related Materials . 2005

机译：高压4H-SIC绝缘栅双极晶体管（IGBT）和MOS门双极晶体管（MGT）的比较
5. Ultra-High Voltage 4H-SiC Bi-Directional Insulated Gate Bipolar Transistors. [D] . Chowdhury, Sauvik. 2016

机译：超高压4H-SiC双向绝缘栅双极晶体管。
6. Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss [O] . Hong-kai Mao, Ying Wang, Xue Wu, 2019

机译：低关断损耗的4H-SiC沟槽绝缘栅双极晶体管的仿真研究
7. A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer [O] . Tao Tian, Sheng-Li Zhang, Yu-Feng Guo, 2019

机译：具有横向掺杂层的掩埋变形的新的低关断损耗SOI横向绝缘栅双极晶体管

Investigation of analytical model of turn-off loss for 4H-SiC high-voltage trench insulated gate bipolar transistors

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