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首页> 外文期刊>Japanese journal of applied physics >Investigation of near-surface material composition of Cu(In,Ga)Se_2 film after air exposure and chemical etching for its Cd-free solar cell
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Investigation of near-surface material composition of Cu(In,Ga)Se_2 film after air exposure and chemical etching for its Cd-free solar cell

机译：无铅太阳能电池暴露于空气和化学刻蚀后Cu（In，Ga）Se_2膜的近表面材料组成的研究

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Cd-free Cu(In,Ga)Se-2 (CIGS) solar cells were fabricated with the structure of soda lime glass/Mo/CIGS/(Zn.Mg)O/In2O3 center dot Sn. The Zn doped into CIGS surface called a Zn-doped CIGS absorber was performed by the deposition of 5-nm-thick Zn layer on the CIGS surface by the sputtering process followed by annealing the sample. It is revealed that conversion efficiency (eta) of the Cd-free CIGS solar cell with the Zn-doped CIGS absorber is increased possibly due to the formation of the pn-homojunclion. In addition, the material compositions near the CIGS surfaces were systematically examined using X-ray photoelectron spectroscopy (XPS) after the air exposure of the GIGS films with different time periods as well as before and after the KCN etching or dipping in the deionized water of the films. The native oxidation near GIGS surfaces, corresponding to In-oxide, Ga-oxide, and Se-oxide, is enhanced after the air exposure of the CIGS films, thus demonstrating the detrimental impact on cell performances. The native oxidation near CIGS surfaces after the air exposure is obviously reduced through the KCN etching on the CIGS films. As a result, the eta(12.6%) of the Cd-free GIGS solar cell is comparable to that (11.9%) of the CdS-buffered GIGS solar cell. (C) 2018 The Japan Society of Applied Physics
机译：采用钠钙玻璃/Mo/CIGS/(Zn.Mg)O/In2O3中心点Sn的结构制备了无镉的Cu（In，Ga）Se-2（CIGS）太阳能电池。通过溅射工艺在CIGS表面上沉积5 nm厚的Zn层，将掺杂到CIGS表面的Zn称为Zn掺杂CIGS吸收剂。揭示了具有Zn掺杂的CIGS吸收剂的无Cd CIGS太阳能电池的转换效率（η）可能由于pn同质结的形成而增加。此外，在GIGS薄膜暴露于不同时间后以及KCN蚀刻或浸入去离子水中之前和之后，使用X射线光电子能谱（XPS）系统检查了CIGS表面附近的材料成分。电影。在CIGS薄膜暴露于空气后，GIGS表面附近的天然氧化（对应于In-氧化物，Ga-氧化物和Se-氧化物）增强了，因此证明了对电池性能的有害影响。通过在CIGS膜上进行KCN蚀刻，暴露于空气后CIGS表面附近的自然氧化明显减少。结果，无Cd GIGS太阳能电池的eta（12.6％）与CdS缓冲GIGS太阳能电池的eta（11.9％）相当。 （C）2018日本应用物理学会

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