Fabrication of an AlN ridge structure using inductively coupled Cl_2/BCl_3 plasma and a TMAH solution

Okumura Hironori

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Fabrication of an AlN ridge structure using inductively coupled Cl_2/BCl_3 plasma and a TMAH solution

机译：使用电感耦合的Cl_2 / BCl_3等离子体和TMAH溶液制备AlN脊结构

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We fabricated an AIN ridge structure using a chlorine-based inductive-coupled plasma reactive-ion etching (ICP-RIE) and a tetramethylammonium hydroxide (TMAH) solution. The ICP etching of single-crystal AIN was systematically investigated by varying ICP power, chamber pressure, and Cl-2/BCl3/Ar mixture gas composition. The selectivity and anisotropy for all samples with a Ni mask were more than 20 and similar to 1, respectively. Etching of AIN in a Cl-2/BCl3 mixture gas yields a higher etch rate compared with a Cl-2/Ar mixture gas. The etch rate of AIN increases with increasing ICP power, reaching 286 nm min(-1) for 400 W. The TMAH solution has an anisotropic characteristic for an AIN etch. A ridge structure with smooth {1 (1) over bar 00} sidewalls was achieved by dipping AIN in the TMAH solution after ICP-RIE. (C) 2019 The Japan Society of Applied Physics

机译：我们使用基于氯的感应耦合等离子体反应离子刻蚀（ICP-RIE）和氢氧化四甲基铵（TMAH）溶液制造了AIN脊结构。通过改变ICP功率，腔室压力和Cl-2 / BCl3 / Ar混合气体成分，系统地研究了单晶AIN的ICP蚀刻。具有镍掩模的所有样品的选择性和各向异性分别大于20和接近1。与Cl-2 / Ar混合气体相比，在Cl-2 / BCl3混合气体中蚀刻AIN可获得更高的蚀刻速率。 AIN的蚀刻速率随ICP功率的增加而增加，在400 W下达到286 nm min（-1）。TMAH解决方案具有AIN蚀刻的各向异性特性。通过在ICP-RIE之后将AIN浸入TMAH溶液中，可以得到在{00（00条）上的侧壁上具有平滑{1（1））的脊结构。（C）2019日本应用物理学会

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《Japanese journal of applied physics》 |2019年第2期|026502.1-026502.4|共4页
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Okumura Hironori;
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Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan;

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机译：Cl_2 / Ar / BCl_3电感耦合等离子体对GaN / AlGaN异质结构的非选择性刻蚀
2. Selective etching of AlGaInP laser structures in a BCl_3/Cl_2 inductively coupled plasma [J] . G T Edwards, D I Westwood, P M Smowton Semiconductor science and technology . 2006,第4期

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3. Characteristics of GaN thin films by inductively coupled plasma etching with Cl_2/BCl_3 and Cl_2/Ar [J] . G. F. Yang, P. Chen, Z. L. Wu, Journal of materials science . 2012,第6期

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4. Inductively coupled plasma etching of In_(1-x-y)Al_xGa_yAs in BCl_3/Cl_2/Ar [C] . NING Jinhua, ZHANG Kefeng, TANG Hengjing, Optoelectronic materials and devices III . 2008

机译：BCl_3 / Cl_2 / Ar中In_（1-x-y）Al_xGa_yAs的电感耦合等离子体刻蚀
5. Solution nebulization device (ultrasonic nebulizer) for inductively coupled plasma spectrometry and alternate plasma source (low-pressure inductively coupled plasma) for mass spectrometry. [D] . Castillano, Maria Theresa M. 1994

机译：溶液雾化设备（超声波雾化器）用于电感耦合等离子体光谱法，备用等离子体源（低压电感耦合等离子体）用于质谱法。
6. Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching [O] . Lihao Wang, Meijie Liu, Junyuan Zhao, 2020

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7. Optimization of a Clsub 2–Hsub 2 inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures [O] . S. Guilet, S. Bouchoule, C. Jany, 2006

机译：CL SUB 2 -H SUB 2的电感耦合等离子体蚀刻工艺的优化适用于用于实现深脊异质结构的非热化INP晶片
8. Comparison of ICl- and IBr-Based Plasma Chemistries for Inductively Coupled Plasma Etching of GaN, InN and AlN;Material Science Engineering B [R] . Abernathy, C. R. , Cho, H. , Donovan, S. M. , 1998

机译：用于GaN，InN和alN的电感耦合等离子体蚀刻的基于ICl和IBr的等离子体化学的比较;材料科学工程B

Fabrication of an AlN ridge structure using inductively coupled Cl_2/BCl_3 plasma and a TMAH solution

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