Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD

Daigo Yoshiaki; Ishii Shigeaki; Kobayashi Takehiko

首页> 外文期刊>Japanese journal of applied physics >Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD

【24h】

Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD

机译：表面C / Si比对高速晶圆旋转垂直CVD生长的4H-SiC同质外延膜的晶圆内均匀度和缺陷密度的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Surface C/Si ratio was demonstrated as a useful indicator for the control of in-wafer distribution of thickness and carrier concentration in 4H-SiC homo-epitaxial films on large-diameter wafers. Close investigation of the dependence of growth rate and carrier concentration on the radial distance from the center of the 150 mm wafer revealed that the actual C/Si ratio just above the wafer: surface C/Si ratio, is quite different to the introduced C/Si ratio. In-wafer distribution of thickness and carrier concentration in the epitaxial films can be explained by the surface C/Si ratio, which suggests that the surface C/Si ratio could be a useful indicator for the precise control of uniform growth on large-diameter wafers. It is also found that two types of SiC films, one with extremely low defect density and the other with low pit density, both with highly uniform growth rate and carrier concentration, could be grown by controlling of the surface C/Si ratio on the whole wafers. (C) 2019 The Japan Society of Applied Physics

机译：结果表明，表面C / Si比可作为控制大直径晶片上4H-SiC同质外延膜厚度和载流子浓度的晶片内分布的有用指标。仔细研究生长速率和载流子浓度对距150 mm晶圆中心的径向距离的依赖性，发现实际C / Si比刚好高于晶圆：表面C / Si比，与引入的C / Si完全不同。硅比率。外延膜的厚度和载流子浓度在晶圆内的分布可以通过表面C / Si比来解释，这表明表面C / Si比可能是精确控制大直径晶圆上均匀生长的有用指标。。还发现，通过控制整个表面的C / Si比，可以生长出两种类型的SiC膜，一种具有极低的缺陷密度，而另一种具有低的凹坑密度，它们具有均一的生长速率和高的载流子浓度。晶圆。（C）2019日本应用物理学会

著录项

来源
《Japanese journal of applied physics》 |2019年第sb期|SBBK06.1-SBBK06.6|共6页
作者
Daigo Yoshiaki; Ishii Shigeaki; Kobayashi Takehiko;
展开▼
作者单位

NuFlare Technol Inc, TFW Equipment Engn Dept, Yokohama, Kanagawa 2358522, Japan;

NuFlare Technol Inc, TFW Equipment Engn Dept, Yokohama, Kanagawa 2358522, Japan;

NuFlare Technol Inc, TFW Equipment Engn Dept, Yokohama, Kanagawa 2358522, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool [J] . Yoshiaki Daigo, Akio Ishiguro, Shigeaki Ishii, Materials science forum . 2018,第期

机译：高速晶圆旋转垂直CVD工具在n型4H-SiC外延膜上实现高晶圆内生长速率和载流子浓度的均匀性
2. Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool [J] . Yoshiaki Daigo, Akio Ishiguro, Shigeaki Ishii, Materials science forum . 2018,第期

机译：使用高速晶圆旋转垂直CVD工具生长的n型4H-SiC外延膜表面和PL缺陷的减少
3. Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool [J] . Yoshiaki Daigo, Akio Ishiguro, Shigeaki Ishii, Materials science forum . 2020,第期

机译：高速晶片旋转垂直CVD工具生长的高均匀性SiC膜低载体浓度的成果
4. High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool [C] . Yoshiaki Daigo, Akio lshiguro, Shigeaki lshii, International Conference on Silicon Carbide and Related Materials . 2018

机译：通过高速晶片旋转垂直CVD工具实现的N型4H-SiC外延膜的生长速率和载体浓度的高晶片均匀性
5. Study of critical current density in superconducting magnesium diboride films grown by ex situ annealing of CVD boron films. [D] . Hanna, Mina. 2009

机译：通过CVD硼薄膜的异位退火生长的超导二硼化镁薄膜中的临界电流密度的研究。
6. Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation [O] . Dae-Kyoung Kim, Kwang-Sik Jeong, Yu-Seon Kang, -1

机译：通过直接等离子体辅助氧化控制4H-SiC上生长的SiO2膜中的缺陷和过渡层
7. Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD [O] . -1

机译：MoCVD生长的AlGaN薄膜表面附近的点缺陷分布和转化
8. Investigation of Defects in Epitaxial 3C-SiC, 4H-SiC and 6H-SiC Films Grown on SiC Substrates [R] . Powell, J. A., Neudeck, P. G., Larkin, D. J., 1993

机译：siC衬底上生长的外延3C-siC，4H-siC和6H-siC薄膜缺陷的研究

Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD

摘要

著录项

相似文献

相关主题

期刊订阅