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首页> 外文期刊>Japanese journal of applied physics >Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO_2/SiC (0338) interfaces
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Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO_2/SiC (0338) interfaces

机译：SiO_2 / SiC（0338）界面处的沟道迁移率，俘获电子密度和霍尔效应的演示和分析

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摘要

Low interface state density (D-it) and high field-effect mobility (mu(fe)) at SiO2/4H-SiC (0 (3) over bar3 (8) over bar) Metal-oxide-semiconductor (MOS) interfaces are known. In order to understand the behavior and the scattering mechanisms induced electrons in more detail, we fabricated the Hall-bar lateral MOSFETs on the 4H-SiC (0 (3) over bar3 (8) over bar) substrate with various channel doping concentrations and evaluated the trapped electron densities and the Hall mobilities by split capacitance-voltage and Hall-effect measurements. Our results demonstrated that more than 80% of the induced electrons at the SiO2/4H-SiC (0 (3) over bar3 (8) over bar) interfaces contribute to the current conduction as the free electrons. The majority of the electron traps seemed to be located mainly at the edge of the conduction band because the trapped electron density increased around the threshold voltage and was saturated in the high gate voltage region. (C) 2019 The Japan Society of Applied Physics
机译：在SiO2 / 4H-SiC（0（3）在bar3（8）在bar之上）处的低界面态密度（D-it）和高场效应迁移率（mu（fe））是金属氧化物半导体（MOS）界面众所周知。为了更详细地了解电子的行为和散射机理，我们在4H-SiC（0（3）over bar3（bar）上方的bar3（8）上方）上以各种沟道掺杂浓度制作了霍尔-bar横向MOSFET并进行了评估通过分开的电容电压和霍尔效应测量获得俘获的电子密度和霍尔迁移率。我们的结果表明，SiO2 / 4H-SiC（bar上方的0（3）（bar上方的8（8））界面上超过80％的感应电子作为自由电子对电流传导做出了贡献。大多数电子陷阱似乎主要位于导带的边缘，因为被俘获的电子密度在阈值电压附近增加并且在高栅极电压区域饱和。 （C）2019日本应用物理学会

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    《Japanese journal of applied physics》 |2019年第sb期|SBBD04.1-SBBD04.5|共5页
  • 作者

    Masuda Takeyoshi; Hatakeyama Tetsuo; Harada Shinsuke; Yano Hiroshi;

  • 作者单位

    Natl Inst Adv Ind Sci & Technol, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan;

    Natl Inst Adv Ind Sci & Technol, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan;

    Natl Inst Adv Ind Sci & Technol, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan;

    Univ Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 3058573, Japan;

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