Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Hayashi Shohei; Yamashita Tamotsu; Miyazato Masaki; Miyajima Masaaki; Senzaki Junji; Kato Tomohisa; Yonezawa Yoshiyuki; Kojima Kazutoshi; Okumura Hajime

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Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

机译：4H-SiC p-i-n二极管正向电流退化中的界面位错和扩展的单个Shockley型堆垛层错的结构分析

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The structure of interfacial dislocations (IDs) formed at different depth and expansion of single Shockley-type stacking faults (1SSF) from the IDs in forward-current degradation of 4H-SiC p-i-n diodes were investigated. IDs showing different contrast in X-ray topography (XRT) were formed during p-i-n diode fabrication processes. From a high-resolution observation using a transmission electron microscopy, it was clarified that IDs observed by different contrast in XRT were different in the formation interface although they had the same Burgers vector of 1/3[11 (2) over bar0] and Si-core type. The ID with brighter contrast in XRT were formed at the shallower interface between p(+) anode and n(-) drift layers, whereas darker contrast ones were formed at the deeper interface between n(-) drift and n(+) buffer layers. Expansion of the 1SSFs originated from the IDs which were formed at the shallower interface occurred under the condition of lower stress-current density than 25 A cm(-2), whereas that originated from ID which were formed at the deeper interface was caused under the condition of higher stress-current density than 1200 A cm(-2). These results indicated that IDs were formed at different depths during device processes, and 1SSF expanded from these IDs under various stress-current conditions. (C) 2019 The Japan Society of Applied Physics.

机译：研究了在4H-SiC p-i-n二极管的正向电流退化中，在不同深度形成的界面位错（IDs）的结构以及单个ID的肖克利型堆垛层错（1SSF）的扩展。在p-i-n二极管制造过程中形成了在X射线形貌（XRT）中显示不同对比度的ID。从使用透射电子显微镜的高分辨率观察结果可以看出，尽管XRT的对比度不同，但ID的Burgers矢量为1/3 [11（2）（在bar0]和Si上相同），但在XRT中观察到的ID却在形成界面上有所不同。核心类型。在XRT中具有较亮对比度的ID形成在p（+）阳极与n（-）漂移层之间的较浅界面处，而较暗对比度的ID是在n（-）漂移层与n（+）缓冲层之间的较深界面处形成的。。 1SSFs的膨胀是在应力-电流密度低于25 A cm（-2）的条件下在较浅的界面上形成的ID引起的，而1SSF的膨胀是在应力电流密度低于25 A cm（-2）的条件下发生的。应力电流密度高于1200 A cm（-2）的条件。这些结果表明，在器件工艺期间，在不同深度形成了ID，并且在各种应力-电流条件下，1SSF从这些ID扩展。（C）2019日本应用物理学会。

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《Japanese journal of applied physics》 |2019年第1期|011005.1-011005.6|共6页
作者
Hayashi Shohei; Yamashita Tamotsu; Miyazato Masaki; Miyajima Masaaki; Senzaki Junji; Kato Tomohisa; Yonezawa Yoshiyuki; Kojima Kazutoshi; Okumura Hajime;
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Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan|Toray Res Ctr Ltd, Otsu, Shiga 5208567, Japan;

Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan|Showa Denko Co Ltd, Minato Ku, Tokyo 1058518, Japan;

Fuji Elect Co Ltd, Matsumoto, Nagano 3900821, Japan;

Fuji Elect Co Ltd, Matsumoto, Nagano 3900821, Japan;

Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan;

Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan;

Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan;

Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan;

Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan;

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Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

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