Low-temperature formation of GeSn nanodots by Sn mediation

Okamoto Hiroshi; Takita Kensuke; Tsushima Kazuto; Tawara Takehiko; Tateno Kouta; Zhang Guoqiang; Gotoh Hideki

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Low-temperature formation of GeSn nanodots by Sn mediation

机译：Sn介导的低温形成GeSn纳米点

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GeSn is expected as a light-emitting material in Si photonics because a direct-bandgap nature appears with Sn composition above 10%. However, the emission wavelength of GeSn is in the mid-IR range. Thus, GeSn nanodots (NDs) are needed for telecom-wavelength emission. In this paper, we propose a formation method for GeSn NDs with Sn mediation. This process consists of low-temperature deposition of Sn and GeSn by vacuum evaporation and subsequent low-temperature annealing. Crystalline GeSn NDs with high density and high Sn content (more than 10%) have been successfully formed without metallic Sn precipitation or segregation of Sn on the dot surface. The possible formation mechanism of Sn-mediated GeSn NDs is also discussed. (c) 2019 The Japan Society of Applied Physics

机译：由于Sn含量超过10％时会出现直接带隙特性，因此有望将GeSn用作Si光子学中的发光材料。然而，GeSn的发射波长在中红外范围内。因此，电信波长发射需要GeSn纳米点（NDs）。本文提出了一种以锡为中介的GeSn NDs的形成方法。该过程包括通过真空蒸发法进行的Sn和GeSn的低温沉积以及随后的低温退火。已经成功形成了高密度和高锡含量（大于10％）的结晶GeSn ND，而没有金属锡沉淀或锡在点表面上偏析。还讨论了Sn介导的GeSn ND的可能形成机理。（c）2019日本应用物理学会

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《Japanese journal of applied physics》 |2019年第sd期|SDDG09.1-SDDG09.8|共8页
作者
Okamoto Hiroshi; Takita Kensuke; Tsushima Kazuto; Tawara Takehiko; Tateno Kouta; Zhang Guoqiang; Gotoh Hideki;
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Hirosaki Univ, Grad Sch Sci & Technol, Hirosaki, Aomori 0368561, Japan;

Hirosaki Univ, Grad Sch Sci & Technol, Hirosaki, Aomori 0368561, Japan|Hokkaido Elect Power Co Inc, Sapporo, Hokkaido, Japan;

Hirosaki Univ, Grad Sch Sci & Technol, Hirosaki, Aomori 0368561, Japan;

NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan;

NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan;

NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan;

NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan;

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专利

1. Low-temperature formation of GeSn nanodots by Sn mediation [J] . Okamoto Hiroshi, Takita Kensuke, Tsushima Kazuto, Japanese journal of applied physics . 2019,第SD期

机译：SN调解通过低温形成Gesn纳米蛋白
2. Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate [J] . Chen Ningli, Lin Guangyang, Zhang Lu, Japanese journal of applied physics . 2017,第5期

机译：通过在SiO2 / Si衬底上的自组装Sn纳米点上溅射Ge低温形成GeSn纳米晶薄膜
3. High Sn-concentration (similar to 8%) GeSn by low-temperature (similar to 150 degrees C) solid-phase epitaxy of a-GeSn/c-Ge [J] . Sadoh Taizoh, Ooato Akira, Park Jong-Hyeok, Thin Solid Films . 2016,第Mara1期

机译：a-GeSn / c-Ge的低温（约150摄氏度）固相外延形成高Sn浓度（约8％）的GeSn
4. Sn Nanodots-Induced Composition Enhancement (NICE) to Achieve 26 at. Sn in GeSn for Mid-Infrared Integrated Photonics [C] . Alejandra V. Cuervo Covian, Jifeng Liu, Yiyin Zhou, Joint ISTDM/ICSI Conference . 2019

机译：SN纳米蛋白诱导的组成增强（漂亮），实现26 at。GESN中的26℃％sn为中红外集成光子
5. High-Sn-content GeSn Alloy towards Room-temperature Mid Infrared Laser [D] . Dou, Wei. 2018

机译：高速含量GESN合金朝向室温中红外激光
6. High-quality GeSn Layer with Sn Composition up to 7 Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application [O] . Jiayin Yang, Huiyong Hu, Yuanhao Miao, 2019

机译：低温磁控溅射法生长的Sn含量高达7％的高质量GeSn层
7. Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation [O] . Kenta Moto, Takayuki Sugino, Ryo Matsumura, 2017

机译：弱激光辐照增强绝缘子上高取代度sn浓度（~10％）Gesn的低温（<200 oC）固相结晶

Low-temperature formation of GeSn nanodots by Sn mediation

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