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首页> 外文期刊>Japanese journal of applied physics >Effect of partial Yb filling on thermoelectric properties of skutterudite compound RhSb_3
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Effect of partial Yb filling on thermoelectric properties of skutterudite compound RhSb_3

机译：部分Yb填充对方钴矿化合物RhSb_3热电性能的影响

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摘要

Partially filled skutterudite compounds YbxRh4Sb12 (0 = x = 0.8 as nominal values) were synthesized under high pressure using a cubic anvil press. The samples were characterized by X-ray diffraction and scanning electron microscope with energy-dispersive X-ray microanalyser. Actual Yb filling ratio x of YbxRh4Sb12 increases up to 0.44, which is higher than the values for any samples prepared at ambient pressure. Thermoelectric properties of YbxRh4Sb12 were investigated in the temperature range of 2-700 K. The electrical resistivity of YbxRh4Sb12 exhibits semiconducting behavior. The resistivity decreases with increasing x. By Yb filling, the lattice thermal conductivity markedly decreases to 2.5 Wm(-1) K-1 at room temperature, from 8.2 Wm(-1) K-1 of unfilled RhSb3. The Seebeck coefficient shows a negative value (n-type conductivity). The highest dimensionless figure of merit ZT of YbxRh4Sb12 was determined to be 0.1 at 420 K for the compound with x = 0.27. The power factor is large (more than 10(-3) Wm(-1)K(-2)) over a wide temperature range between 250 and 450 K. (C) 2019 The Japan Society of Applied Physics
机译：使用立方砧压机在高压下合成部分填充的方钴矿化合物YbxRh4Sb12（标称值为0 <= x <= 0.8）。通过X射线衍射和能量色散X射线显微分析仪的扫描电子显微镜对样品进行表征。 YbxRh4Sb12的实际Yb填充率x增加到0.44，这比在环境压力下制备的任何样品的值都要高。在2-700 K的温度范围内研究了YbxRh4Sb12的热电性能。YbxRh4Sb12的电阻率表现出半导体性能。电阻率随x的增加而降低。通过Yb填充，晶格热导率在室温下从未填充RhSb3的8.2 Wm（-1）K-1显着降低到2.5 Wm（-1）K-1。塞贝克系数显示为负值（n型电导率）。对于x = 0.27的化合物，YbxRh4Sb12的最高无量纲品质因数ZT被确定为420 K下的0.1。在250至450 K的宽温度范围内，功率因数很大（超过10（-3）Wm（-1）K（-2））。（C）2019日本应用物理学会

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