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首页> 外文期刊>Japanese journal of applied physics >Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation
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Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation

机译：LiNbO3与硅晶片激光辐照界面的研究

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This paper focuses on the bonding interface of LiNbO3 and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO3 and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO3 and Si was demonstrated. (C) 2017 The Japan Society of Applied Physics
机译：本文重点研究了LiNbO3和硅晶片通过激光辐照键合的界面。研究了跨键合界面的纳米结构和复合材料分布。实验界面分析表明，在纳米水平上没有形成裂纹或空隙。还发现键合界面具有包含Nb，O和Si的无序非晶层。这表明由于在LiNbO3和Si之间的界面处进行了熔融键合，因此实现了牢固的键合。另外，证明了该键合方法对LiNbO3和Si的晶片级键合的有效性。 （C）2017日本应用物理学会

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