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首页> 外文期刊>Japanese journal of applied physics >Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AIGaAs/GaAs/AIGaAs double-heterojunction field-effect transistor
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Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AIGaAs/GaAs/AIGaAs double-heterojunction field-effect transistor

机译：肖特基光电流在N-AIGAAS / GAAS / AIGAAS双异质结晶体管中局部栅极边缘照明的温度依赖性

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摘要

We investigated the photoresponses of an n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor (FET) for local illumination in the edge regions of the Schottky metal gate. The Schottky photocurrent J(SG) from the source to the metal gate was examined at various temperatures T by using laser beams with wavelengths of 808 and 670 nm. We found that the magnitude and the T dependence of J(SG) are drastically affected by the laser wave length; (1) J(SG) for the 670 nm laser illumination is about 23 and 4 times larger than that for the 808 nm laser illumination at T = 80 and 280 K, and (2) as T decreases from 280 to 80 K, J(SG) decreases for the 808 nm laser illumination and increases for the 670 nm laser illumination. By analyzing the experimental data, we showed what factors are important in determining J(SG). (C) 2019 The Japan Society of Applied Physics
机译：我们调查了N-AlgaAs / GaAs / Algaas双相异质结晶体管（FET）的光响应，用于肖特基金属栅极边缘区域中的局部照明。通过使用波长为808和670nm的激光束在各种温度下检查来自源极到金属栅极的肖特基光电流J（SG）。我们发现J（SG）的幅度和T依赖性受激光波长的大大影响; （1）670nm激光照射的J（SG）比T = 80和280k的808nm激光照射大约为23和4倍，并且（2）为T从280到80 k，J （SG）降低808nm激光照射并增加670nm激光照射。通过分析实验数据，我们展示了在确定J（SG）中的重要因素。 （c）2019年日本应用物理学会

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