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Growth process of hexagonal boron nitride in the diffusion and precipitation method studied by X-ray photoelectron spectroscopy

机译：X射线光电子谱研究六边形氮化物中六边形氮化物的生长过程

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摘要

Submonolayer h-BN was grown on Ni foil in ultra-high vacuum by the diffusion and precipitation method and the growth process was studied by X-ray photoelectron spectroscopy. Formation of h-BN started to be observed at 600 degrees C. All through the process, the surface was always slightly B-rich, which is consistent with the fact that B which is soluble in Ni at a high temperature can diffuse in Ni by the conventional bulk diffusion and insoluble N cannot. Moreover, both formation and decomposition of h-BN were found to occur at elevated temperatures possibly depending on provision of N atoms to the surface. On the Ni surface, decomposition of h-BN was observed at a relatively low temperature of 800 degrees C. (C) 2019 The Japan Society of Applied Physics
机译：通过扩散和沉淀法在超高真空中的Ni箔上生长亚麻糖，通过X射线光电子能谱研究生长过程。 H-BN的形成开始于600℃。全通过该过程，表面始终略微富有，这与在高温下可溶于Ni的B可以在Ni中弥漫的事实一致传统的散装扩散和不溶性N不能。此外，发现H-BN的形成和分解在升高的温度下可能取决于向表面提供n原子。在Ni表面上，在800℃的相对低温的温度下观察到H-Bn的分解。（c）2019年日本应用物理学学会

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    《Japanese journal of applied physics》 |2019年第2019期|SIIB15.1-SIIB15.4|共4页
  • 作者

    Suzuki Satoru; Haruyama Yuichi;

  • 作者单位

    Univ Hyogo Lab Adv Sci & Technol Ind Koto Ku Ako Hyogo 6781205 Japan;

    Univ Hyogo Lab Adv Sci & Technol Ind Koto Ku Ako Hyogo 6781205 Japan;

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