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首页> 外文期刊>Japanese journal of applied physics >Formation and optoelectronic property of strain-relaxed Ge_(1-x-y)Si_xSn_y/Ge_(1-x)Sn_x/Ge_(1-x-y)Si_xSn_y double heterostructures on a boron- ion-implanted Ge(001) substrate
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Formation and optoelectronic property of strain-relaxed Ge_(1-x-y)Si_xSn_y/Ge_(1-x)Sn_x/Ge_(1-x-y)Si_xSn_y double heterostructures on a boron- ion-implanted Ge(001) substrate

机译：应变放松GE_（1-X-Y）SI_XSN_Y / GE_（1-X）SN_X / GE_X / GE_（1-X-Y）SI_XSN_Y在硼 - 离子注入的GE（001）衬底上的双异质结构的形成和光电性

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摘要

We have investigated the formation and optoelectronic properties of strain relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on ion-implanted Ge substrates. The strain relaxation of Ge1-x-ySixSny and Ge1-xSnx epitaxial layers was achieved using an ionimplanted Ge substrate. The maximal degree of strain relaxation (DSR) of the Ge1-xSnx layers was evaluated to be 46%. In addition, we obtained a sharp and strong peak in the photoluminescence (PL) spectra from the sample with a DSR of 46%, while no strong peak was detected from a sample with a smaller DSR (22%). From the theoretical calculation of the energy band structure and the measurement temperature dependence of the PL intensity, the sharp and strong peak can be explained by the transition from an indirect to direct bandgap semiconductor due to the increase of the DSR and a concomitant increase of the G-valley electron population. Moreover, the PL intensity increases by the improvement of the crystallinity by a post deposition annealing process. (C) 2019 The Japan Society of Applied Physics
机译：我们研究了在离子注入的GE基材上的应变松弛GE1-X-YSIXNY / GE1-XSNX / GE1-GE1-GE1-X-YSIXNY双异质结构的形成和光电性能。使用InOimplanted Ge衬底实现GE1-X-YSIXMY和GE1-XSNX外延层的应变松弛。 GE1-XSNX层的最大应变弛豫（DSR）的最大程度评价为46％。另外，我们在光致发光（PL）光谱中获得了46％的样品中的尖锐且强峰，而DSR在具有较小DSR（22％）的样品中没有检测到强峰。从能量带结构的理论计算和PL强度的测量温度依赖性，由于DSR的增加和伴随的增加，可以通过间接到直接带隙半导体的转变来解释尖锐和强峰值。 G-Valley电子人口。此外，PL强度通过后沉积退火工艺改善结晶度而增加。 （c）2019年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第2019期|SIIB23.1-SIIB23.6|共6页
  • 作者

    Fukuda Masahiro; Rainko Denis; Sakashita Mitsuo; Kurosawa Masashi; Buca Dan; Nakatsuka Osamu; Zaima Shigeaki;

  • 作者单位

    Nagoya Univ Grad Sch Engn Dept Mat Phys Chikusa Ku Furo Cho Nagoya Aichi 4648603 Japan;

    Forschungszentrum Julich Peter Grunberg Inst PGI 9 D-52425 Julich Germany|Forschungszentrum Julich JARA Fundamentals Future Informat Technol D-52425 Julich Germany;

    Nagoya Univ Grad Sch Engn Dept Mat Phys Chikusa Ku Furo Cho Nagoya Aichi 4648603 Japan;

    Nagoya Univ Grad Sch Engn Dept Mat Phys Chikusa Ku Furo Cho Nagoya Aichi 4648603 Japan;

    Forschungszentrum Julich Peter Grunberg Inst PGI 9 D-52425 Julich Germany|Forschungszentrum Julich JARA Fundamentals Future Informat Technol D-52425 Julich Germany;

    Nagoya Univ Grad Sch Engn Dept Mat Phys Chikusa Ku Furo Cho Nagoya Aichi 4648603 Japan|Nagoya Univ Inst Mat & Syst Sustainabil Chikusa Ku Furo Cho Nagoya Aichi 4648601 Japan;

    Nagoya Univ Inst Innovat Future Soc Chikusa Ku Furo Cho Nagoya Aichi 4648601 Japan;

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