Period size effect induced crystalline quality improvement of AIN on a nano-patterned sapphire substrate

Xie Nan; Xu Fujun; Zhang Na; Lang Jing; Wang Jiaming; Wang Mingxing; Sun Yuanhao; Liu Baiyin; Ge Weikun; Qin Zhixin; Kang Xiangning; Yang Xuelin; Wang Xinqiang; Shen Bo

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Period size effect induced crystalline quality improvement of AIN on a nano-patterned sapphire substrate

机译：周期大小效应诱导纳米图形蓝宝石衬底上AIN的结晶质量改善

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A comprehensive strategy of crystal quality control for AlN grown on a nano-patterned sapphire substrate has been explored based on the period size effect. It is found that the crystalline perfection of AlN can be greatly improved by enlarging the period size from 1.0 to 1.4 mu m, and the X-ray diffraction omega-scan FWHM values for (0002) and (10-12) planes reach 162 and 181 arcsec, respectively, owning to the significantly reduced area ratio of the coalescence zone. Our results indicate the pattern design requires a critical balance between reducing the area ratio of the coalescence zone and decreasing the coalescence thickness. (C) 2019 The Japan Society of Applied Physics

机译：基于周期尺寸效应，已经探讨了在纳米图案化蓝宝石衬底上生长的ALN晶体质量控制的综合策略。结果发现，通过扩大1.0至1.4μm的周期尺寸，可以大大提高ALN的结晶完善，以及（0002）的X射线衍射OMEGA-SCAN FWHM值和（10-12）平面达到162分别拥有聚结区的显着降低的面积比的181弧度。我们的结果表明，图案设计需要降低聚结区的面积比和降低聚结厚度之间的临界平衡。（c）2019年日本应用物理学会

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来源
《Japanese journal of applied physics》 |2019年第10期|100912.1-100912.5|共5页
作者
Xie Nan; Xu Fujun; Zhang Na; Lang Jing; Wang Jiaming; Wang Mingxing; Sun Yuanhao; Liu Baiyin; Ge Weikun; Qin Zhixin; Kang Xiangning; Yang Xuelin; Wang Xinqiang; Shen Bo;
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Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China|Collaborat Innovat Ctr Quantum Matter Beijing 100871 Peoples R China;

Peking Univ Sch Phys State Key Lab Artificial Microstruct & Mesoscop P Beijing 100871 Peoples R China|Peking Univ Minist Educ Nanooptoelect Frontier Ctr Beijing 100871 Peoples R China|Collaborat Innovat Ctr Quantum Matter Beijing 100871 Peoples R China;

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专利

1. Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates [J] . Hsieh C.-Y., Lin B.-W., Cho H.-J., Photonics Technology Letters, IEEE . 2012,第24期

机译：使用液相沉积纳米图案蓝宝石衬底改善外延GaN质量
2. Nanometer-thin ALD-Al_2O_3 for the improvement of the structural quality of AIN grown on sapphire substrate by MOVPE [J] . Ryan G. Banal, Masataka Imura, Daiju Tsuya, Physica status solidi . 2017,第2期

机译：纳米薄的ALD-Al_2O_3用于改善MOVPE在蓝宝石衬底上生长的AIN的结构质量
3. Improvement in the Crystalline Quality of Semipolar AIN(1102) Films by Using ZnO Substrates with Self-Organized Nanostripes [J] . Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Applied physics express . 2010,第4期

机译：通过使用自组织纳米带的ZnO衬底改善半极性AIN（1102）膜的晶体质量
4. Improvement of GaN crystalline quality on nanoscale patterned sapphire substrates [C] . 2010 International Conference on Optical MEMS and Nanophotonics . 2010

机译：纳米图案化蓝宝石衬底上GaN晶体质量的改善
5. Effect of the substrate-induced crystalline interphase on the adhesion of polyurethane to metals. [D] . Kim, Jangsoon. 2001

机译：基质诱导的结晶相对聚氨酯与金属粘合力的影响。
6. High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography [O] . Lisheng Zhang, Fujun Xu, Jiaming Wang, -1

机译：通过纳米压印光刻技术在纳米图案蓝宝石衬底上进行高质量的AlN外延
7. High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography [O] . Lisheng Zhang, Fujun Xu, Jiaming Wang, 2016

机译：纳米印记光刻制备的纳米图案蓝宝石基材上的高质量ALN外延
8. High Quality AIN And GaN Epilayers Grown On (00-1) Sapphire, (100), and (111)Silicon Substrates [R] . Kung, P., Saxler, A., Zhang, X., 1995

机译：在（00-1）蓝宝石，（100）和（111）硅衬底上生长的高质量aIN和GaN外延层

Period size effect induced crystalline quality improvement of AIN on a nano-patterned sapphire substrate

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