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首页> 外文期刊>Japanese journal of applied physics >Grain boundary induced short-term memory effect in fully depleted thin-polysilicon devices
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Grain boundary induced short-term memory effect in fully depleted thin-polysilicon devices

机译：晶界诱导完全耗尽的薄多晶硅装置中的短期记忆效应

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摘要

In this paper, we investigate the floating body effect (FBE) in fully depleted polysilicon-body ultrathin-body MOSFETs. Generally, the FBE cannot occur in a fully depleted body. However, we demonstrate that an FBE-like phenomenon can be observed in fully depleted polysilicon-body MOSFETs due to the grain boundaries of the polysilicon. To analyze this, devices with various conditions were fabricated and measured. As a result, we may argue that generated holes can be trapped at grain boundaries, which causes an FBE-like phenomenon. Based on this, we expect that thin-polysilicon devices can be utilized for various applications such as 1T-DRAM or synaptic devices. (C) 2019 The Japan Society of Applied Physics
机译：在本文中，我们研究了完全耗尽的多晶硅 - 体超薄 - 体MOSFET中的浮体效应（FBE）。通常，FBE不能发生在完全耗尽的身体中。然而，我们证明，由于多晶硅的晶界，可以在完全耗尽的多晶硅 - 体MOSFET中观察到类似的现象。为了分析它，制造和测量具有各种条件的装置。结果，我们可能认为产生的孔可以被捕获在晶界，这导致类似的异常现象。基于此，我们预计薄多晶硅装置可以用于各种应用，例如1T-DRAM或突触装置。 （c）2019年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第10期|101004.1-101004.5|共5页
  • 作者

    Baek Myung-Hyun; Jang Taejin; Kim Hyungjin; Park Jungjin; Kwon Min-Woo; Hwang Sungmin; Kim Suhyeon; Lee Jeong-Jun; Park Byung-Gook;

  • 作者单位

    Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;

    Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;

    Yeungnam Univ Dept Elect Engn 280 Daehak Ro Gyongsan 38541 South Korea;

    Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;

    Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;

    Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;

    Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;

    Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;

    Seoul Natl Univ ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;

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