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首页> 外文期刊>Japanese journal of applied physics >Analysis of subcell open-circuit voltages of InGaP/GaAs dual-junction solar cells fabricated using hydride vapor phase epitaxy
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Analysis of subcell open-circuit voltages of InGaP/GaAs dual-junction solar cells fabricated using hydride vapor phase epitaxy

机译：使用氢化物​​气相外延制造的InGaP / GaAs双结太阳能电池的子单元开路电压分析

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摘要

The current-voltage (I-V) characteristics of the individual subcells of InGaP/GaAs dual-junction (DJ) solar cells fabricated using hydride vapor phase epitaxy were investigated by electroluminescence (EL) and external quantum efficiency measurements. In particular, we found the radiative recombination efficiency of the InGaP single-junction (SJ) cell was lower by a factor of 40 than that of GaAs SJ cells because the InGaP SJ cell did not have any passivation layer at the front surface. By taking each radiative recombination efficiency into account, we accurately projected I-V curves of each subcell in the InGaP/GaAs DJ cell. By combining the projected I-V curves with short-circuit current density obtained experimentally from light I-V measurements, the open-circuit voltage (V-oc) was determined to be 1339 mV for the InGaP top cell and 978 mV for the GaAs bottom cell, respectively, which were consistent with the experimentally obtained V-oc values of each SJ cell. (C) 2020 The Japan Society of Applied Physics
机译：通过电致发光（EL）和外部量子效率测量研究了使用氢化物​​气相外延制造的InGaP / GaAs双结（DJ）太阳能电池的各个子单元的电流 - 电压（I-V）特性。特别地，我们发现InGaP单结（SJ）电池的辐射重组效率低于GaAs SJ细胞的倍数40，因为InGaP SJ Cell在前表面上没有任何钝化层。通过考虑每个辐射重组效率，我们准确地投影了InGaP / GaAs DJ Cell中每个子单元的I-V曲线。将投影的IV曲线与从光IV测量实验获得的短路电流密度组合，分别测定了开路电压（V-OC）为INGAP顶部电池的1339mV，并且为GaAs底部单元格为978mV ，这与每个SJ小区的实验获得的V-OC值一致。 （c）2020日本应用物理学会

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    《Japanese journal of applied physics》 |2020年第sg期|SGGF02.1-SGGF02.5|共5页
  • 作者

    Aihara Taketo; Tayagaki Takeshi; Oshima Ryuji; Shoji Yasushi; Makita Kikuo; Ubukata Akinori; Sugaya Takeyoshi;

  • 作者单位

    Natl Inst Adv Ind Sci & Technol Tsukuba Ibaraki 3058568 Japan;

    Natl Inst Adv Ind Sci & Technol Tsukuba Ibaraki 3058568 Japan;

    Natl Inst Adv Ind Sci & Technol Tsukuba Ibaraki 3058568 Japan;

    Natl Inst Adv Ind Sci & Technol Tsukuba Ibaraki 3058568 Japan;

    Natl Inst Adv Ind Sci & Technol Tsukuba Ibaraki 3058568 Japan;

    Taiyo Nippon Sanso Corp Tsukuba Ibaraki 3002611 Japan;

    Natl Inst Adv Ind Sci & Technol Tsukuba Ibaraki 3058568 Japan;

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