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首页> 外文期刊>Japanese journal of applied physics >Effect of Si and Zn doping on surface defects in AIGalnAs compositionally graded buffer by MOCVD
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Effect of Si and Zn doping on surface defects in AIGalnAs compositionally graded buffer by MOCVD

机译：Si和Zn掺杂对MOCVD的AIGANAs合成分级缓冲液表面缺陷的影响

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摘要

The influence of Zn and Si atoms on AlGaInAs compositionally graded buffers (CGBs) was studied using the approaches of optical microscopy, reciprocal space mapping, Raman spectroscopy and cathodoluminescence imaging. CGBs with Zn or Si doping could achieve good relaxation of about 90%, while Si but not Zn doping significantly impacted the tilt angle. Ribbon-like scratches along the 1-10 direction were observed in samples with Si doping. Sharp increases in threading dislocation density (TDD) and dislocation pile-up were observed along the scratches. In contrast, CGBs with Zn doping featured smooth surfaces and lower TDDs, contributing to improved chip performance. Based on these results, we conclude that Si atoms decrease the glide length of misfit dislocation segments and cause dislocation nucleation multiplication and dislocation pile-up and eventually increase surface roughness and TDD, while Zn could serve as a surface surfactant medium. (C) 2020 The Japan Society of Applied Physics
机译：使用光学显微镜的方法，往复空间映射，拉曼光谱和阴极发光成像研究Zn和Si原子对AlGainas合成分级缓冲液（CGBS）的影响。 CGBS与Zn或Si掺杂可以达到约90％的良好放松，而Si但不是Zn掺杂显着影响倾斜角度。在具有Si掺杂的样品中观察到沿<1-10>方向的带状划痕。沿着划痕观察到穿线位错密度（TDD）和位错堆积的急剧增加。相比之下，具有Zn掺杂的CGB具有光滑表面和更低的TDD，有助于提高芯片性能。基于这些结果，我们得出结论，Si原子降低了错位脱臼段的滑动长度，并导致位移成核倍增和位错堆积，最终增加表面粗糙度和TDD，而Zn可以用作表面表面活性剂培养基。 （c）2020日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2020年第2期|025507.1-025507.7|共7页
  • 作者

    Zhang Lu; Chen Zimin; Liu Xuezhen; Huang Shanshan; Fei Zeyuan; Li Jian; Wang Gang;

  • 作者单位

    Sun Yat Sen Univ Sch Elect & Informat Technol State Key Lab Optoelect Mat & Technol Guangzhou 510006 Peoples R China;

    Sun Yat Sen Univ Sch Elect & Informat Technol State Key Lab Optoelect Mat & Technol Guangzhou 510006 Peoples R China;

    Uniwatt Technol Co Ltd Zhongshan 528437 Peoples R China;

    Uniwatt Technol Co Ltd Zhongshan 528437 Peoples R China;

    Sun Yat Sen Univ Sch Elect & Informat Technol State Key Lab Optoelect Mat & Technol Guangzhou 510006 Peoples R China;

    Sun Yat Sen Univ Sch Elect & Informat Technol State Key Lab Optoelect Mat & Technol Guangzhou 510006 Peoples R China;

    Sun Yat Sen Univ Sch Elect & Informat Technol State Key Lab Optoelect Mat & Technol Guangzhou 510006 Peoples R China|Sun Yat Sen Univ Foshan Inst Foshan 528225 Peoples R China;

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