Improved conduction in GaN Schottky junctions with HfO_2 passivation layers through post-deposition annealing

Kim Kwangeun

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Improved conduction in GaN Schottky junctions with HfO_2 passivation layers through post-deposition annealing

机译：通过沉积后退火，通过HFO_2钝化层改善GaN肖特基结的导通

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The conduction in GaN Schottky junctions with HfO2 passivation layers can be improved by post-deposition annealing (PDA). Surface defects and ionic states of Ga-polar GaN removed by PDA lead to the formation of downward bend banding with a positive surface polarity. X-ray photoelectron spectroscopy is utilized to assess the effects of PDA on the atomic composition and surface polarity changes at the HfO2/GaN interface and GaN surface. The leakage current level and ideality factor of the GaN Schottky junctions improved from 4.73 x 10(-6) A cm(-2) to 8.21 x 10(-8) A cm(-2) and from 1.47 to 1.14, respectively. With the application of PDA, the flow of leakage current through the Schottky metal area reduced as the surface defect states were removed. (c) 2020 The Japan Society of Applied Physics

机译：通过沉积后退火（PDA）可以提高GaN肖特基结合的GaN肖特基结合的导通钝化层。通过PDA除去Ga-Polar GaN的表面缺陷和离子状态，导致具有正表面极性的向下弯曲条带的形成。 X射线光电子能谱用于评估PDA对HFO2 / GaN界面和GaN表面的原子组合物和表面极性变化的影响。 GaN肖特基交界处的泄漏电流水平和理想因子分别从4.73×10（-6）厘米（-2）至8.21×10（-8）厘米（-2）和1.47至1.14改善。随着PDA的应用，除去表面缺损状态，通过肖特基金属面积通过肖特基金属面积的漏电流的流动。（c）2020日本应用物理学会

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《Japanese journal of applied physics》 |2020年第3期|030902.1-030902.5|共5页
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Kim Kwangeun;
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Hongik Univ Dept Elect & Elect Convergence Engn Sejong 30016 South Korea;

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2. Extremely Scaled (~0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO_2 Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing [J] . Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Japanese journal of applied physics . 2012,第2Issue2期

机译：通过原子层沉积和氧控制帽沉积后退火制备的高k（k = 40）HfO_2栅堆叠的极度尺度化（〜0.2 nm）等效氧化物厚度
3. Layer structure variations of ultra-thin HfO_2 films induced by post-deposition annealing [J] . Wei-En Fu, Yong-Qing Chang Applied Surface Science . 2011,第17期

机译：沉积后退火引起的超薄HfO_2薄膜的层结构变化
4. Junction-barrier Schottky diodes fabricated with very thin highly Mg-doped p-GaN(20 nm)-GaN layers grown on GaN substrates [C] . Kentaro Hayashi, Hiroshi Ohta, hirohumi Tsuge, 2017 International Meeting for Future of Electron Devices, Kansai . 2017

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Improved conduction in GaN Schottky junctions with HfO_2 passivation layers through post-deposition annealing

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