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首页> 外文期刊>Japanese journal of applied physics >Dominant scattering mechanism in SiC MOSFET: comparative study of the universal mobility and the theoretically calculated channel mobility
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Dominant scattering mechanism in SiC MOSFET: comparative study of the universal mobility and the theoretically calculated channel mobility

机译：SIC MOSFET中的主导散射机制：普遍移动性与理论计算渠道流动性的比较研究

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摘要

The universal mobility in SiC MOSFETs is investigated and compared with the theoretically calculated channel mobility. From an analysis of channel mobility of SiC MOSFETs with sufficiently reduced Coulomb scattering centers, it is quantitatively shown that eta, which determines effective electric fields E-eff (=q(N-dpl + eta N-s)/e(s)), should be set to 0.26 to express the mobility universally. Acoustic-phonon scattering-limited mobility, intervalley-scattering-limited mobility, and roughness-scattering-limited mobility are calculated and compared with the universal mobility. Consequently, it is shown that acoustic phonon scattering is dominant in a wide E-eff range, whereas roughness scattering has a slight effect in a high E-eff range, and the influence of intervalley-scattering is limited throughout the E-eff range. In particular, it is shown that acoustic phonon scattering between the 1st conduction band minima (CBM) and 2nd CBM, which exists 120 meV above the 1st CBM, greatly limits mobility of SiC MOSFETs.
机译：研究了SiC MOSFET中的通用迁移率，并与理论上计算的信道移动性进行了比较。根据具有足够减少的库仑散射中心的SiC MOSFET的信道移动性的分析，定量地表明ETA，其确定有效电场E-EFF（= Q（N-DPL + ETA NS）/ E（s））将普遍设定为0.26以表达移动性。散射散射限制的迁移率，inchalley散射限制的迁移率和粗糙度散射限制迁移率并与普遍的移动性进行了比较。因此，示出了声学声子散射在宽的E-EFF范围内显着，而粗糙度散射在高E-off范围内具有轻微的效果，并且在整个E-EFF范围内限制inchalley散射的影响。特别地，示出了在第一CBM之上存在120meV的第一导管极限（CBM）和第二CBM之间的声学​​声子散射大大限制了SiC MOSFET的迁移率。

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