Optimization of atomic layer deposition temperature of ZrO_2 protective coat for GalnAsP photonic crystal nanolaser sensor

Akihiro Sakata; Keisuke Watanabe; Toshihiko Baba

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Optimization of atomic layer deposition temperature of ZrO_2 protective coat for GalnAsP photonic crystal nanolaser sensor

机译：GALNASP光子晶体纳糖区ZRO_2保护涂层原子层沉积温度的优化

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This study examined the effect of atomic layer deposition temperature of a ZrO_2 protective coat on GalnAsP semiconductor photonic crystal nanolaser sensors. At low temperatures (around 100 °C), the nonradiative centers at the ZrO_2/GaInAsP interfaces were reduced, and the laser operation and refractive index sensing characteristics were stabilized. At high temperatures (around 250 °C), the nonradiative centers increase, which, in turn, improves the ion sensitivity based on surface recombination.

机译：该研究检测了ZrO_2保护涂层的原子层沉积温度在GalnASP半导体光子晶体纳糖传感器上的影响。在低温（约100°C）时，ZrO_2 / GaInasp接口处的非阵列中心降低，并且激光操作和折射率感测特性稳定。在高温下（约250°C），非阵容升高，又改善了基于表面重组的离子敏感性。

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《Japanese journal of applied physics》 |2020年第1期|012001.1-012001.3|共3页
作者
Akihiro Sakata; Keisuke Watanabe; Toshihiko Baba;
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Department of Electrical and Computer Engineering Yokohama National University 79-5 Tokiwadai Hodogaya-ku Yokohama 240-8501 Japan;

Department of Electrical and Computer Engineering Yokohama National University 79-5 Tokiwadai Hodogaya-ku Yokohama 240-8501 Japan;

Department of Electrical and Computer Engineering Yokohama National University 79-5 Tokiwadai Hodogaya-ku Yokohama 240-8501 Japan;

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Optimization of atomic layer deposition temperature of ZrO_2 protective coat for GalnAsP photonic crystal nanolaser sensor

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