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首页> 外文期刊>Japanese journal of applied physics >Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization
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Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization

机译：通过光电二极管表征研究的原子扩散键合的InGaAs / A-Ge / InGaAs结构的少数群体传输

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摘要

We experimentally investigated minority-electron transport through a wafer-bonded InGaAs/a-Ge/InGaAs structure fabricated by using atomic-diffusion-bonding technology. The transport properties of minority electrons were examined in a uni-traveling-carrier photodiode (UTC-PD) structure. The C-V characteristics and the DC and O/E responses were compared with those of a conventional UTC-PD, which revealed that the bonded region behaved as an n-type semiconductor and the electric field was concentrated in the vicinity of the bonding interface when a bias voltage was applied to the PD. From the O/E response, it was found that the minority-electron transport through bonded region is similar to that in a conventional PD without wafer bonding under a relatively high bias condition.
机译：我们通过使用原子扩散键合技术通过晶片键合的InGaAs / A-Ge / InGaAs结构进行了实验研究了少数群体输送。在UNI行驶载波光电二极管（UTC-PD）结构中检查少数群体电子的运输特性。与传统UTC-PD的CV特性和DC和O / E响应进行了比较，这揭示了作为N型半导体的粘合区域表现为n型半导体，并且当a时，将电场集中在键合界面附近偏置电压施加到PD。从O / E的反应，发现通过粘合区域的少数电子传输类似于在不在相对高的偏压条件下的晶片粘合的传统PD中的少数电子传输。

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  • 来源
    《Japanese journal of applied physics》 |2020年第1期|016501.1-016501.5|共5页
  • 作者

    Yuki Yamada; Masahiro Nada; Miyuki Uomoto; Takehito Shimatsu; Fumito Nakajima; Takuya Hoshi; Hideaki Matsuzaki;

  • 作者单位

    NTT Device Technology Laboratories NTT Corporation 3-1 Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan;

    NTT Device Technology Laboratories NTT Corporation 3-1 Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan;

    Tohoku Univ. Research Institute of Electrical Communication Katahira 2-1-1 Aoba-ku Sendai 980-8577 Japan;

    Tohoku Univ. Research Institute of Electrical Communication Katahira 2-1-1 Aoba-ku Sendai 980-8577 Japan;

    NTT Device Technology Laboratories NTT Corporation 3-1 Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan;

    NTT Device Technology Laboratories NTT Corporation 3-1 Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan;

    NTT Device Technology Laboratories NTT Corporation 3-1 Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan;

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