Stress evolution in different growth mechanism of GaN grown by Na-flux method

Si Zhiwei; Liu Zongliang; Gu Hong; Ren Yujiao; Dong Xiaoming; Gao Xiaodong; Wang Jianfeng; Xu Ke

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Stress evolution in different growth mechanism of GaN grown by Na-flux method

机译：Na-Flux法生长的甘GaN不同生长机制的应力演变

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摘要

The study found that homoepitaxial Na-flux GaN has a large stress at the interface, and the stress is released to a certain extent within 50 mu m in the growth direction of the Na-flux GaN. After passing through the columnar growth region, the Na-flux GaN tends to a stress-free state finally. The columnar growth mode is produced by GaN island growth, the islands nucleate and coalescence to produce tensile stress. The Na-flux GaN undergoes a columnar growth to generate tensile stress, which offsets the residual compressive stress at the interface, which is conducive to stress release.

机译：该研究发现，同性记Na-Flux GaN在界面处具有很大的应力，并且应力在Na-Flux GaN的生长方向的50μm内释放到一定程度。在通过柱状生长区域之后，Na-Flux GaN最终倾向于无应力状态。柱状生长模式由甘岛生长产生，岛屿核心和聚结以产生拉伸应力。 Na-Flux GaN经历柱状生长以产生拉伸应力，其在界面处抵消残留压缩应力，这有利于应力释放。

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来源
《Japanese journal of applied physics》 |2020年第11期|110901.1-110901.5|共5页
作者
Si Zhiwei; Liu Zongliang; Gu Hong; Ren Yujiao; Dong Xiaoming; Gao Xiaodong; Wang Jianfeng; Xu Ke;
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作者单位

Univ Sci & Technol China Sch Nano Tech & Nano Bion Hefei 230026 Anhui Peoples R China|Chinese Acad Sci Suzhou Inst Nano Tech & Nano Bion Suzhou 215123 Jiangsu Peoples R China;

Chinese Acad Sci Suzhou Inst Nano Tech & Nano Bion Suzhou 215123 Jiangsu Peoples R China;

Chinese Acad Sci Suzhou Inst Nano Tech & Nano Bion Suzhou 215123 Jiangsu Peoples R China;

Univ Sci & Technol China Sch Nano Tech & Nano Bion Hefei 230026 Anhui Peoples R China|Chinese Acad Sci Suzhou Inst Nano Tech & Nano Bion Suzhou 215123 Jiangsu Peoples R China;

Chinese Acad Sci Suzhou Inst Nano Tech & Nano Bion Suzhou 215123 Jiangsu Peoples R China;

Chinese Acad Sci Suzhou Inst Nano Tech & Nano Bion Suzhou 215123 Jiangsu Peoples R China;

Chinese Acad Sci Suzhou Inst Nano Tech & Nano Bion Suzhou 215123 Jiangsu Peoples R China|Suzhou Nanowin Sci & Technol Co Ltd Suzhou 215123 Jiangsu Peoples R China;

Univ Sci & Technol China Sch Nano Tech & Nano Bion Hefei 230026 Anhui Peoples R China|Chinese Acad Sci Suzhou Inst Nano Tech & Nano Bion Suzhou 215123 Jiangsu Peoples R China|Suzhou Nanowin Sci & Technol Co Ltd Suzhou 215123 Jiangsu Peoples R China;

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原文格式 PDF
正文语种 eng
中图分类
关键词
GaN; Na-flux; Raman; stress evolution; growth mechanism;

机译：GaN;Na-Flux;拉曼;压力进化;生长机制;

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1. Study on the stress and mechanism of self-separated GaN grown by Na-flux method [J] . Si Zhiwei, Liu Zongliang, Gu Hong, Applied physics express . 2021,第3期

机译：Na-Flux法生长的自分离GaN的应力与机制研究
2. Mechanism for enhanced single-crystal GaN growth in the C-assisted Na-flux method [J] . Takahiro Kawamura, Hiroki Imabayashi, Mihoko Maruyama, Applied physics express . 2016,第1期

机译：C辅助钠通量法增强单晶GaN生长的机理
3. Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process [J] . Yamada Takumi, Imanishi Masayuki, Murakami Kosuke, Japanese journal of applied physics . 2020,第2期

机译：用蓝宝石溶解过程对Na-Flux法生长的GaN / Sapphire接触区域对GaN晶片鞠躬的影响
4. Analysis of Stress and Impurity Evolution Related to Growth Sector in Na-flux GaN by Nanobeam X-ray Diffraction [C] . Z. D. Wu, T. Hamachi, Y. Hayashi, 応用物理学会春季学術講演会;応用物理学会 . -1

机译：纳米射线X射线衍射对Na-Flux GaN中生长扇区的应力和杂质演化分析
5. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth [D] . Kawagy, Alaa 2019

机译：用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
6. Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier [O] . Xiaorun Zhou, Taiping Lu, Yadan Zhu, 2017

机译：混合N2 / H2生长GaN势垒的InGaN / GaN多量子阱的表面形貌演化机理。
7. Photoelectrochemical Properties of Single Crystalline and Polycrystalline GaN Grown by the Na-flux Method [O] . Katsushi FUJII, Takashi KATO, Tsutomu MINEGISHI, 2010

机译：Na-Flux法生长单晶和多晶GaN的光电化学性质
8. Differences and Simularities Between Structural Properties of GaN Grown by Different Growth Methods [R] . Liliental-Weber, Z., Jasinski, J., Washburn, J. 2002

机译：不同生长方法生长GaN结构特性的差异与模拟

Stress evolution in different growth mechanism of GaN grown by Na-flux method

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