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首页> 外文期刊>Japanese journal of applied physics >Regression analysis of photodecomposable quencher concentration effects on chemical gradient in chemically amplified extreme ultraviolet resist processes
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Regression analysis of photodecomposable quencher concentration effects on chemical gradient in chemically amplified extreme ultraviolet resist processes

机译:化学扩增极紫外抗蚀剂化学梯度对化学梯度的光耐药猝灭剂浓度效应的回归分析

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摘要

Chemically amplified resists have been used in the state-of-the-art extreme ultraviolet (EUV) lithography. A basic additive has been added to the resist formula as a quencher to control acid diffusion. In this study, the effects of photodecomposable quencher (PDQ) concentration on the chemical gradient (an indicator of line edge roughness) in chemically amplified EUV resist processes were investigated. The chemical gradient was calculated on the basis of the sensitization and reaction mechanisms for different half-pitches, sensitivities, photoacid generator (PAG) concentrations, PDQ concentrations, and effective reaction radii for deprotection. The obtained 130 000 data were analyzed by least squares, lasso, ridge, and elastic net regressions. Regarding the contribution to the chemical gradient, PDQ concentration was apparently symmetric to PAG concentration. Optimum PDQ concentrations were well predicted (accuracy of approximately 10%) within the examined variable ranges even with 495 training data using the fitted parameters obtained by lasso, ridge, and elastic net regressions.
机译:已经在最先进的极端紫外(EUV)光刻中使用化学放大的抗蚀剂。已经将碱性添加剂添加到抗抗液中作为猝灭剂以控制酸扩散。在该研究中,研究了研究了化学扩增的EUV抗蚀剂过程中化学梯度对化学梯度(线边缘粗糙度的指示剂)的光致猝灭剂(PDQ)浓度的影响。基于不同半沥青,灵敏度,光酸发生器(PAG)浓度,PDQ浓度和脱保护的有效反应半导体的致敏机制来计算化学梯度。通过最小二乘,套索,脊和弹性网回归分析所获得的130 000个数据。关于化学梯度的贡献,PDQ浓度明显对称对PAG浓度。即使使用由套索,脊和弹性净回归获得的拟合参数,也可以在检查的变量范围内预测最佳PDQ浓度(约10%)的精度,即使是495次训练数据。

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