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首页> 外文期刊>Japanese journal of applied physics >Double-gate tunnel field-effect transistor with inner doping and spacer regions
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Double-gate tunnel field-effect transistor with inner doping and spacer regions

机译：具有内掺杂和间隔区域的双栅极隧道场效应晶体管

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In this study, a tunnel field-effect transistor (FET) with source-side inner doping and a drain-side spacer is proposed to obtain high current drivability and reduced gate-to-drain capacitance, simultaneously. The effects of the inner doping region (region(inner)) are investigated with various lengths (L-ID) and concentrations (N-ID). As the N-ID increases, the more source-to-region(inner) tunneling is added to conventional source-to-channel tunneling and thus the total tunneling current is enhanced. Moreover, with a wider L-ID, the on-current is reduced by the wider source-to-region(inner) tunneling width and the source-to-region(inner) tunneling is generated at a lower gate voltage by the L-ID-induced limitation of energy band bending. Also, the impact of the inner spacer is evaluated with various inner spacer lengths (L-IS). By introducing the inner spacer, the gate-to-drain capacitance can be significantly reduced. Consequently, the proposed tunnel FET has a reduced gate-to-drain capacitance as well as an increased tunneling current, which leads an improvement in switching delay.
机译：在本研究中，提出了一种隧道场效应晶体管（FET），其具有源侧内掺杂和漏极侧间隔件，以同时获得高电流驾驶能力和降低的栅极 - 漏极电容。用各种长度（L-ID）和浓度（N-ID）研究内掺杂区（区域（内部））的效果。随着N-ID的增加，将更多的源区（内部）隧道添加到传统的源到信道隧道中，因此增强了总隧道电流。此外，利用较宽的L-ID，通过更宽的源极（内部）隧道宽度和源极限（内部）隧道通过L-在较低栅极电压下产生电流。 ID诱导的能带弯曲限制。而且，内垫片的撞击是用各种内部间隔物长度（L-IS）进行评估的。通过引入内部间隔物，可以显着降低栅极到漏极电容。因此，所提出的隧道FET具有降低的栅极 - 漏极电容以及增加的隧道电流，这导致开关延迟的改善。

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