Phase field model of single Shockley stacking fault expansion in 4H-SiC PiN diode

Kano Akira; Goryu Akihiro; Kato Mitsuaki; Ota Chiharu; Okada Aoi; Nishio Johji; Hirohata Kenji; Shibutani Yoji

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Phase field model of single Shockley stacking fault expansion in 4H-SiC PiN diode

机译：4H-SIC引脚二极管中单震撼堆垛机故障扩展的相现场模型

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Expansion of a single Shockley stacking fault (SSF) during forward-current operation decreases the reliability of 4H-SiC bipolar devices. We propose a practical method for analyzing the defect evolution of SSF expansion based on free energy according to current density, temperature, and resolved shear stress conditions. The free energy includes chemical potential and elastic strain energy. Specifically, the chemical potential is related to the driving force for the formation of SSFs by temperature and current, and the elastic strain energy corresponds to the driving force for dislocations that form SSFs under the applied stress. It was confirmed that the proposed multiphysics method could well simulate SSF evolution when stress and current were applied. Furthermore, the results suggest that quantum well action, in which electrons in n-type 4H-SiC enter SSF-induced quantum well states to lower the energy of the dislocation system, affects the driving force of SSF formation.

机译：在前电流运行期间扩展单个震动堆垛机故障（SSF）降低了4H-SiC双极设备的可靠性。我们提出了一种实用的方法，用于根据电流密度，温度和分辨的剪切应力条件分析基于自由能的SSF膨胀的缺陷演化。自由能包括化学潜力和弹性应变能量。具体地，化学电位与通过温度和电流形成SSF的驱动力相关，并且弹性应变能对应于在施加的应力下形成SSFS的脱位的驱动力。证实，当施加应力和电流时，所提出的多体液方法可以很好地模拟SSF演变。此外，结果表明量子阱作用，其中N型4H-SiC进入SSF诱导量子阱状态以降低位错系统的能量，影响SSF形成的驱动力。

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来源
《Japanese journal of applied physics》 |2021年第2期|024004.1-024004.11|共11页
作者
Kano Akira; Goryu Akihiro; Kato Mitsuaki; Ota Chiharu; Okada Aoi; Nishio Johji; Hirohata Kenji; Shibutani Yoji;
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Toshiba Co Ltd Corp Res & Dev Ctr Kawasaki Kanagawa 2128582 Japan|Osaka Univ Dept Mech Engn Suita Osaka 5650871 Japan;

Toshiba Co Ltd Corp Res & Dev Ctr Kawasaki Kanagawa 2128582 Japan;

Toshiba Co Ltd Corp Res & Dev Ctr Kawasaki Kanagawa 2128582 Japan;

Toshiba Co Ltd Corp Res & Dev Ctr Kawasaki Kanagawa 2128582 Japan;

Toshiba Co Ltd Corp Res & Dev Ctr Kawasaki Kanagawa 2128582 Japan;

Toshiba Co Ltd Corp Res & Dev Ctr Kawasaki Kanagawa 2128582 Japan;

Toshiba Co Ltd Corp Res & Dev Ctr Kawasaki Kanagawa 2128582 Japan;

Osaka Univ Dept Mech Engn Suita Osaka 5650871 Japan|Vietnam Japan Univ Nanotechnol Program Nam Tu Liem 12015 Vietnam;

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正文语种 eng
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Shockley stacking fault (SSF); 4H-SiC; PiN diode; Phase field model;

机译：Shockley Stacking Fault（SSF）;4H-SIC;PIN二极管;相场模型;

Phase field model of single Shockley stacking fault expansion in 4H-SiC PiN diode

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