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首页> 外文期刊>Japanese journal of applied physics >Design space exploration of hysteretic negative capacitance ferroelectric FETs based on static solutions of Landau-Khalatnikov model for nonvolatile memory applications
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Design space exploration of hysteretic negative capacitance ferroelectric FETs based on static solutions of Landau-Khalatnikov model for nonvolatile memory applications

机译：基于Landau-Khalatnikov模型对非易失性存储器应用模型的静止解决方案设计空间探索

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摘要

Systematic design space exploration of negative capacitance ferroelectric field-effect transistors (FeFETs) for nonvolatile memory operations was performed, combining load line analyses and circuit simulations. Unlike those FeFETs aiming at a steep subthreshold slope, the key design target here is to achieve bi-stable current versus voltage FET characteristics with appropriate hysteresis width (i.e. memory window). Remanent polarization, coercive voltage, and interfacial layer thickness were selected as design parameters. The results show that, if a ferroelectric gate dielectric film obeying ideal single-domain Landau-Khalatnikov model dynamics with reduced remanent polarization is available, ultralow voltage nonvolatile memories operating with sub-one volt voltage swing would become possible. An interesting feature of the negative capacitance FeFETs is that, unlike conventional multiple domain FeFETs, the memory window can be adjusted to a much smaller value than twice the coercive voltage. The lowered remanent polarization is required to suppress the depolarization field to an acceptable level for reliability. It is proposed that considering the abrupt polarization switching, three-transistor and two-transistor memory cells would be suitable for working and code storage memories, respectively.
机译：对负电容铁电场效应晶体管（FEFET）进行了系统设计空间探索，用于非易失性存储器操作，配合负载线分析和电路模拟。与旨在陡峭的亚阈值斜坡的FFFET不同，这里的关键设计目标是实现双稳态电流与电压FET特性，具有适当的滞后宽度（即记忆窗口）。选择倒置极化，矫顽电压和界面层厚度作为设计参数。结果表明，如果使用具有降低的熔化极化的均匀单域Landau-Khalatnikov模型动态的铁电栅极介电薄膜可用，则可以实现与副一伏电压摆动的超低电压非易失性存储器。负电容FEFET的有趣特征是，与传统的多个域FEFET不同，可以将存储器窗口调整为比矫顽电压的两倍要更小的值。需要降低的再现极化来抑制去极化字段以可靠性的可接受水平。建议考虑突然的偏振切换，三晶体管和双晶体管存储器单元可以适合于加工和码存储存储器。

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