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首页> 外文期刊>Japanese journal of applied physics >Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion
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Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion

机译：使用具有薄绝缘体插入的低功效功能金属的金属/ n型4H-SiC触点的肖特基势垒高度降低

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摘要

We examined the lowering of the Schottky barrier height (SBH) of a metal/n-type 4H-silicon carbide (SiC) contact using low-work-function metals to realize an ohmic contact through a low-temperature process. We found that the SBHs of Y, Mg, and Hf/n-type 4H-SiC contacts deviated from the Schottky limit and that the SBH was greater than similar to 0.5 eV at minimum. Inserting 0.3 and 0.7 nm thick SiN x layers into a Mg/n-type 4H-SiC interface could help effectively reduce the SBH; Mg/SiN x /n-type 4H-SiC exhibited an SBH as low as similar to 0.36 eV. This reduction in the SBH could be attributed to the suppression of the metal-induced gap state manifested at the conduction band edge. Finally, through a quantitative analysis, it was demonstrated that the contact resistivity of a Mg/SiN x (0.3 nm)/4H-SiC interface could be reduced by approximately one order of magnitude compared with that of a Mg/4H-SiC interface at donor concentrations below similar to 3 x 10(19) cm(-3).
机译：我们检查了使用低功效金属的金属/ n型4H-碳化硅（SBH）的肖特基屏障高度（SBH）的降低，通过低温工艺实现欧姆接触。 我们发现，y，mg和hf / n型4h-siC触点偏离肖特基极限的SBH，并且SBH最小值大于0.5eV。 将0.3和0.7nm厚的SIN X层插入Mg / n型4H-SIC接口中可以有助于有效地减少SBH; Mg / Sin X / N型4H-SiC表现出低于0.36eV的SBH。 SBH的这种降低可归因于抑制在导通带边缘处的金属诱导的间隙状态。 最后，通过定量分析，证明了MG / SIN X（0.3nm）/ 4h-SiC接口的接触电阻率与MG / 4H-SIC界面相比，可以减小大约一个级数。 低于3×10（19）厘米（-3）的供体浓度。

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