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首页> 外文期刊>Japanese journal of applied physics >Deep neural network-based approach for breakdown voltage and specific on-resistance prediction of SOI LDMOS with field plate
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Deep neural network-based approach for breakdown voltage and specific on-resistance prediction of SOI LDMOS with field plate

机译：基于深度神经网络的击穿电压和具有励磁板SOI LDMOS特定导通电阻的方法

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摘要

Breakdown voltage (BV) and specific on-resistance (R (on,sp)), are critical indicators to measure the quality of the power device. To improve the device performance, field plate technology has been developed by modifying the electric field distribution. However, the current technology computer-aided design (TCAD) simulation cannot predict the effect of field plate on BV and R (on,sp) simultaneously, and the operation process is complicated. This paper proposes a deep neural network (DNN)-based model instead of TCAD to predict the effect of field plates on BV and R (on,sp) of silicon on insulator lateral double diffused metal oxide semiconductor. The experimental results show that, compared with TCAD simulation, the average deviation for BV and R (on,sp) is 5.06% and 2.55%, respectively. Also, the time for BV prediction is accelerated significantly up by 1.23 x 10(5). Our DNN model provides a potential direction to predict device performance with higher efficiency.
机译：击穿电压（BV）和特定的导通电阻（R（ON，SP））是测量功率器件质量的关键指示器。 为了提高器件性能，通过改变电场分布开发了现场板技术。 然而，目前的技术计算机辅助设计（TCAD）模拟不能同时预测现场板上的磁盘板和R（on，sp）的效果，并且操作过程复杂。 本文提出了一种深度神经网络（DNN）基础模型而不是TCAD，以预测绝缘体横向双扩散金属氧化物半导体硅的BV和R（on，Sp）上的磁场板的效果。 实验结果表明，与TCAD仿真相比，BV和R（SP）的平均偏差分别为5.06％和2.55％。 而且，BV预测的时间显着加速为1.23×10（5）。 我们的DNN模型提供了具有更高效率更高的设备性能的潜在方向。

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  • 来源
    《Japanese journal of applied physics》 |2021年第7期|077002.1-077002.7|共7页
  • 作者

    Chen Jing; Guo Xiaobo; Guo Yufeng; Zhang Jun; Zhang Maolin; Yao Qing; Yao Jiafei;

  • 作者单位

    Nanjing Univ Posts & Telecommun Coll Elect & Opt Engn Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Coll Microelect Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Natl & Local Joint Engn Lab RF Integrat & Micropa Nanjing 210023 Peoples R China;

    Nanjing Univ Posts & Telecommun Coll Elect & Opt Engn Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Coll Microelect Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Natl & Local Joint Engn Lab RF Integrat & Micropa Nanjing 210023 Peoples R China;

    Nanjing Univ Posts & Telecommun Coll Elect & Opt Engn Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Coll Microelect Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Natl & Local Joint Engn Lab RF Integrat & Micropa Nanjing 210023 Peoples R China;

    Nanjing Univ Posts & Telecommun Coll Elect & Opt Engn Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Coll Microelect Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Natl & Local Joint Engn Lab RF Integrat & Micropa Nanjing 210023 Peoples R China;

    Nanjing Univ Posts & Telecommun Coll Elect & Opt Engn Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Coll Microelect Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Natl & Local Joint Engn Lab RF Integrat & Micropa Nanjing 210023 Peoples R China;

    Nanjing Univ Posts & Telecommun Coll Elect & Opt Engn Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Coll Microelect Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Natl & Local Joint Engn Lab RF Integrat & Micropa Nanjing 210023 Peoples R China;

    Nanjing Univ Posts & Telecommun Coll Elect & Opt Engn Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Coll Microelect Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Posts & Telecommun Natl & Local Joint Engn Lab RF Integrat & Micropa Nanjing 210023 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    Breakdown voltage; specific on-resistance; field plate; deep neural networks; SOI LDMOS;

    机译：击穿电压;特定的导通电阻;场板;深神经网络;SOI LDMOS;

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