Possible contribution of the Gibbs-Thomson effect to filling nanopipes in GaN homoepitaxial layers

Mochizuki Kazuhiro; Horikiri Fumimasa; Ohta Hiroshi; Mishima Tomoyoshi

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Possible contribution of the Gibbs-Thomson effect to filling nanopipes in GaN homoepitaxial layers

机译：Gibbs-Thomson效应对GaN主页层填充纳米盖的可能贡献

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Reported suppression of the transformation of screw dislocations into nanopipes in GaN homoepitaxial layers by increasing total pressure (P (total)) during metalorganic vapor-phase epitaxy was assumed to be a phenomenon of nanopipe formation followed by its refill. We thermodynamically calculated equilibrium vapor pressure of Ga (P (Ga)) by considering the Gibbs-Thomson effect. Even with an assumption of a small surface free energy of 1.4 J m(-2), the difference between the calculated P (Ga)'s in the vicinity of a wafer surface and in a nanopipe rapidly increased at P (total) 750 hPa, explaining the increased vapor-phase diffusing flux of Ga into a nanopipe.

机译：报告抑制通过增加金属有机气相外延期间的总压力（P（总））在GaN同源层中将螺杆脱位转化为纳米盖，是纳米水上形成的现象，然后再填充。通过考虑Gibbs-Thomson效应，我们通过考虑Ga（P（Ga））的热力学计算的平衡蒸气压。即使假设1.4J m（-2）的小表面自由能，晶片表面附近和纳米叶片附近的计算的p（ga）之间的差异在p（总）＆gt中迅速增加。 750 HPA，解释Ga进入纳米叶片的增加的气相扩散助焊剂。

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来源
《Japanese journal of applied physics》 |2021年第7期|078001.1-078001.3|共3页
作者
Mochizuki Kazuhiro; Horikiri Fumimasa; Ohta Hiroshi; Mishima Tomoyoshi;
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作者单位

Hosei Univ Koganei Tokyo 1848584 Japan;

SCIOCS Co Ltd Hitachi Ibaraki 3191418 Japan;

Hosei Univ Koganei Tokyo 1848584 Japan;

Hosei Univ Koganei Tokyo 1848584 Japan;

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正文语种 eng
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关键词
GaN; MOVPE; nanopipe; Gibbs-Thomson effect; pressure;

机译：GaN;MOVPE;纳米浮削;GIBBS-THOMSON效果;压力;

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1. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates [J] . Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Japanese journal of applied physics . 2019,第SC期

机译：独立的GaN衬底上的垂直p-n二极管中的金属有机气相外延在同质外延生长过程中由螺丝位错形成的纳米管与反向泄漏电流之间的相关性
2. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates [J] . Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Japanese journal of applied physics . 2019,第SC期

机译：在独立P-N二极管中垂直于螺旋脱位在垂直于螺杆脱位形成的纳米纤维之间的相关性，垂直P-N二极管在独立式GaN基板上的垂直P-N二极管
3. Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers [J] . Masashi Kato, Takato Asada, Takuto Maeda, Journal of Applied Physics . 2021,第11期

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4. Growth of homoepitaxial GaN layers and GaN/AlGaN multiple quantum wells on GaN single crystal substrates by molecular-beam epitaxy [C] . Shuichi Kubo, Tomoyuki Tanabe, Masafumi Konishi, Conference on Solid State Lighting II, Jul 9-11, 2002, Seattle, Washington, USA . 2002

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5. Studies of growth mechanism and defect origins in 4H-silicon carbide substrates and homoepitaxial layers. [D] . Wang, Huanhuan. 2014

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7. Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography [O] . Jaemyung Kim, Okkyun Seo, Satoshi Hiroi, 2020

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Possible contribution of the Gibbs-Thomson effect to filling nanopipes in GaN homoepitaxial layers

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