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首页> 外文期刊>Japanese journal of applied physics >Polarization control of ScAIN, ZnO and PbTiO_3 piezoelectric films: application to polarization-inverted multilayer bulk acoustic wave and surface acoustic wave devices
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Polarization control of ScAIN, ZnO and PbTiO_3 piezoelectric films: application to polarization-inverted multilayer bulk acoustic wave and surface acoustic wave devices

机译：SCAIN，ZnO和PBTIO_3压电薄膜的偏振控制：偏振倒多层散装声波和表面声波器件的应用

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摘要

Polarization-inverted multilayers are promising for application in bulk acoustic wave (BAW) resonators, BAW transformers, surface acoustic wave (SAW) devices and nonlinear optics crystals (NLOs). However, is difficult to obtain a polarization-inverted multilayer by a conventional polarization control technique using a buffer layer. Recently developed ion beam-induced polarization inversion film growth is attractive for multilayer fabrication. Low-energy ion beam irradiation (several hundred electron volts) during film growth enables the growth of polarization-inverted (0001)/(000 (1) over bar) c-axis normal ZnO, AlN and ScAlN piezoelectric films. These structures excite a thickness extensional mode (longitudinal wave). In contrast, high-energy ion beam irradiation (300-3000 eV) induces c-axis parallel film growth which allows the fabrication of c-axis horizontal inversion ZnO and AlN multilayers. These structures are suitable for thickness shear mode (TSM) film bulk acoustic resonators (FBARs), TSM liquid sensors and out-of-plane NLOs. This review introduces the unusual polarization inversion film growth induced by ion beams and its applications. On the other hand, a (001)/(00 (1) over bar) polarization-inverted layer can be obtained using ferroelectric films. This paper also provides the result of external electric field-induced polarization inversion of PbTiO3 epitaxial films. (C) 2021 The Japan Society of Applied Physics
机译：偏振 - 倒的多层是在散装声波（BAW）谐振器，BAW变压器，表面声波（SAW）器件和非线性光学晶体（NLOS）中的应用。然而，难以使用缓冲层通过传统的偏振控制技术获得偏振反转的多层。最近开发的离子束诱导的偏振反转膜生长对于多层制造具有吸引力。薄膜生长期间的低能量离子束照射（几百个电子伏特）使得偏振 - 倒（0001）/（000（1）上方的生长）C轴正常ZnO，ALN和烫线压电膜。这些结构激发厚度伸缩模式（纵波）。相反，高能离子束照射（300-3000eV）诱导C轴平行膜生长，其允许制造C轴水平反转ZnO和AlN多层。这些结构适用于厚度剪切模式（TSM）薄膜堆积声谐振器（FBAR），TSM液体传感器和平面外NLO。本综述介绍了离子束及其应用引起的异常偏振反转膜生长。另一方面，可以使用铁电膜获得（001）/（00（1）上方的杆）偏振反转层。本文还提供了PBTIO3外延膜的外部电场诱导的偏振反转的结果。 （c）2021日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2021年第sd期|SD0803.1-SD0803.10|共10页
  • 作者

    Yanagitani Takahiko; Takayanagi Shinji;

  • 作者单位

    Waseda Univ Fac Sci & Engn Shinjuku Ku Tokyo Japan|Waseda Univ ZAIKEN Shinjuku Ku Tokyo Japan|JST CREST Tokyo Japan;

    Doshisha Univ Kyotanabe Fac Sci & Engn Kyoto Japan;

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