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A Multi-functional Molecular Modifier Enabling Efficient Large-Area Perovskite Light-Emitting Diodes

机译:一种多功能分子调节器,实现高效的大面积钙钛矿发光二极管

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摘要

With rapid progress in perovskite light-emitting diodes (PeLEDs), the electroluminescence performance of large-area is of increasing interest. We investigated why large-area performance lags behind that achieved in laboratory-scale devices and found that defects in perovskite films-emerging from thermal convection during solvent evaporation, as well as electronic traps formed during perovskite crystallization-are chief causes. Here, we report a molecular modification strategy that simultaneously eliminates pinholes in perovskite layers by controlling the dynamics of film formation and that passivates defects in perovskites by incorporating Br species, thereby preventing shorts and non-radiative recombination. The molecular modifier 1,3,5-tris (bromomethyl) benzene (TBB) also modulates the electronic structure of injection or transport materials to achieve improved charge injection and balanced charge transport. As a result, we demonstrate 20 mm 3 20 mm green perovskite nanocrystal LEDs that achieve an external quantum efficiency (EQE) of over 16%, a record for large-area PeLEDs.
机译:随着Perovskite发光二极管(PELEDS)的快速进展,大面积的电致发光性能增加了兴趣。我们调查了为什么在实验室型器件中实现的大面积性能滞后,发现在溶剂蒸发过程中从热对流中出现钙钛矿薄膜的缺陷,以及在钙钛矿结晶期间形成的电子陷阱 - 是主要原因。这里,我们通过控制成膜的动态并通过掺入BR物种来同时消除钙钛矿层中的针孔在钙钛矿层中消除针孔,从而防止短裤和非辐射重组。分子调节剂1,3,5-三(溴甲基)苯(TBB)还调制注射或运输材料的电子结构,以实现改善的电荷注入和平衡的电荷运输。结果,我们展示了20mm 3 20毫米的绿色钙钛矿纳米晶体LED,该纳米晶体LED实现了超过16%的外部量子效率(EQE),是大面积封闭的记录。

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  • 来源
    《Joule》 |2020年第9期|1977-1987|共11页
  • 作者单位

    Shanghai Univ Key Lab Adv Display & Syst Applicat Minist Educ 149 Yanchang Rd Shanghai 200072 Peoples R China;

    Univ Toronto Dept Elect & Comp Engn 35 St George St Toronto ON M5S 1A4 Canada;

    Sichuan Univ Coll Mat Sci & Engn Inst Solar Energy Mat & Devices 24 South Sect 1 Yihuan Rd Chengdu 610065 Peoples R China|Univ Toledo Dept Phys & Astron Toledo OH 43606 USA|Univ Toledo Wright Ctr Photovolta Innovat & Commercializat Toledo OH 43606 USA;

    Univ Toronto Dept Elect & Comp Engn 35 St George St Toronto ON M5S 1A4 Canada;

    Shanghai Univ Key Lab Adv Display & Syst Applicat Minist Educ 149 Yanchang Rd Shanghai 200072 Peoples R China;

    Shanghai Univ Key Lab Adv Display & Syst Applicat Minist Educ 149 Yanchang Rd Shanghai 200072 Peoples R China;

    Shanghai Univ Key Lab Adv Display & Syst Applicat Minist Educ 149 Yanchang Rd Shanghai 200072 Peoples R China;

    Shanghai Univ Key Lab Adv Display & Syst Applicat Minist Educ 149 Yanchang Rd Shanghai 200072 Peoples R China;

    Univ Toronto Dept Elect & Comp Engn 35 St George St Toronto ON M5S 1A4 Canada;

    Univ Toronto Dept Elect & Comp Engn 35 St George St Toronto ON M5S 1A4 Canada;

    Shanghai Tech Univ Sch Phys Sci & Technol 393 Middle Huaxia Rd Shanghai 201210 Peoples R China;

    Shanghai Tech Univ Sch Phys Sci & Technol 393 Middle Huaxia Rd Shanghai 201210 Peoples R China;

    Univ Toledo Dept Phys & Astron Toledo OH 43606 USA|Univ Toledo Wright Ctr Photovolta Innovat & Commercializat Toledo OH 43606 USA;

    Univ Toronto Dept Elect & Comp Engn 35 St George St Toronto ON M5S 1A4 Canada;

    Shanghai Univ Key Lab Adv Display & Syst Applicat Minist Educ 149 Yanchang Rd Shanghai 200072 Peoples R China;

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