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Effects of thickness on the microstructure and energy-storage performance of PLZT antiferroelectric thick films

机译:厚度对PLZT反铁电厚膜微观结构和储能性能的影响

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摘要

The typical antiferroelectric (AFE) thick films Pb_(0.94)La_(0.04)(Zr_(0.98)Ti_(0.02))O_3 (PLZT 4/98/2) with different thicknesses of 2, 4, 6 and 10 μm were successfully deposited on Pt(111)/TiO_2/SiO_2/Si(100) substrates from polyvinylpyrrolidone (PVP)-modified chemical solution. The effects of thickness on the crystalline structure, electrical properties and the energy-storage performance were investigated in detail. X-Ray diffraction analysis and scanning electron microscopy pictures indicated that AFE films with a thickness less than 4 μm showed a (111)-preferred orientation with uniform surface microstructure. The electrical measurement results illustrated that, as the thickness increased, the saturation polarization, remnant polarization, dielectric constant and leakage current of AFE thick films were enhanced gradually, while the capacitive density and the critical breakdown fields were decreased. Moreover, all the PLZT 4/98/2 AFE films shared the same Curie temperature of about 224℃. As a result, the AFE thick films showed good energy-storage stability in a wide temperature range. The maximum energy-storage density of 47.4 J/cm~3 was obtained in the 2 μm-thick PLZT 4/98/2 films measured at 3699 kV/cm.
机译:成功地沉积了厚度分别为2、4、6和10μm的典型反铁电(AFE)厚膜Pb_(0.94)La_(0.04)(Zr_(0.98)Ti_(0.02))O_3(PLZT 4/98/2)聚乙烯吡咯烷酮(PVP)改性的化学溶液在Pt(111)/ TiO_2 / SiO_2 / Si(100)衬底上的表面改性。详细研究了厚度对晶体结构,电性能和储能性能的影响。 X射线衍射分析和扫描电子显微镜图片表明,厚度小于4μm的AFE膜表现出(111)优先取向,具有均匀的表面微观结构。电学测量结果表明,随着厚度的增加,AFE厚膜的饱和极化,残余极化,介电常数和漏电流逐渐增大,而电容密度和临界击穿场减小。此外,所有PLZT 4/98/2 AFE膜都具有相同的居里温度,约为224℃。结果,AFE厚膜在宽温度范围内显示出良好的储能稳定性。在3699 kV / cm下测得的厚度为2μm的PLZT 4/98/2薄膜中,最大储能密度为47.4 J / cm〜3。

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  • 来源
    《Journal of advanced dielectrics》 |2013年第3期|1350021.1-1350021.7|共7页
  • 作者单位

    Laboratory of Integrated Exploitation of Bay an Obo Multi-Metal Resources Inner Mongolia University of Science and Technology Baotou 014010, P. R. China ,School of Materials and Metallurgy Inner Mongolia University of Science and Technology Baotou 014010, P. R. China;

    Laboratory of Integrated Exploitation of Bay an Obo Multi-Metal Resources Inner Mongolia University of Science and Technology Baotou 014010, P. R. China ,School of Materials and Metallurgy Inner Mongolia University of Science and Technology Baotou 014010, P. R. China;

    Laboratory of Integrated Exploitation of Bay an Obo Multi-Metal Resources Inner Mongolia University of Science and Technology Baotou 014010, P. R. China ,School of Materials and Metallurgy Inner Mongolia University of Science and Technology Baotou 014010, P. R. China;

    Laboratory of Integrated Exploitation of Bay an Obo Multi-Metal Resources Inner Mongolia University of Science and Technology Baotou 014010, P. R. China;

    Laboratory of Integrated Exploitation of Bay an Obo Multi-Metal Resources Inner Mongolia University of Science and Technology Baotou 014010, P. R. China ,School of Materials and Metallurgy Inner Mongolia University of Science and Technology Baotou 014010, P. R. China;

    College of Physics and Technology Inner Mongolia University Hohhot 010020, P. R. China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Electronic materials; chemical synthesis; dielectric properties; energy storage;

    机译:电子材料;化学合成介电性能储能;

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