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Determination of Velocity Distributions in Semiconductor Devices via Half- Range Resolution of the Boundary Layers

机译:通过边界层的半程分辨率确定半导体器件中的速度分布

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摘要

Future generations of VLSI circuits will require semiconductor devices that are faster and smaller than current devices. Designing these new devices will require accurate predictions of kinetic effects, which are critical to succesfully predicting their performance. For these devices, previous models do not provide a satisfactory description of carrier transport. We use the half range expansion technique to resolve the source/channel and channel/drain boundary layers, and thus determine the carrier current distribution.
机译:未来的VLSI电路将需要比当前设备更快,更小的半导体设备。设计这些新设备将需要准确预测动力学效果,这对于成功预测其性能至关重要。对于这些设备,先前的模型无法提供令人满意的载具运输说明。我们使用半程扩展技术来解析源极/沟道和沟道/漏极边界层,从而确定载流子电流分布。

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