Thermionic and Semiconducting Properties of [Ag]Cs2O, Ag, Cs

Davey John E.

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Thermionic and Semiconducting Properties of [Ag]Cs2O, Ag, Cs

机译：[Ag]Cs2O，Ag，Cs的热电子和半导体性质

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Thermionic emission measurements have been carried out on [Ag]Cs2O, Ag, Cs layers in a state of near maximum thermionic yield. The data have been plotted according to the Fowler equation to determine thermionic work functions; an average value of 0.83 ev has been obtained. However, cooling the layers, below ambient, to temperatures of -40°C, results in an increase of work function of approximately 0.3 ev. Photoelectric emission measurements on these same layers yield an average photoelectric work function of 1.06 ev. Conductivity measurements on Cs2O, Ag, Cs layers are linear between 100 and -70°C; an activation energy of ∼0.1 ev has been determined from data in this temperature range. Conductivity measurements on Cs2O layers containing no reduced silver exhibit changes in slope similar to the thermionic data. Activation energies computed from above the break in conductivity data are ∼0.25 ev. Cooling the layers to -70°C and below results in increases of activation energy of ∼0.1 ev.

机译：已经在[Ag]Cs2O，Ag，Cs层上以接近最大热电子产率的状态进行了热电子发射测量。根据Fowler方程绘制数据以确定热电子功函数。平均值为0.83ev。然而，将这些层在低于环境温度下冷却至-40℃的温度导致功函数增加约0.3ev。在这些相同层上进行的光电发射测量得出的平均光电功函数为1.06ev。 Cs2O，Ag，Cs层上的电导率测量值在100至-70°C之间呈线性；根据该温度范围内的数据确定了约0.1ev的活化能。在不含还原银的Cs2O层上进行的电导率测量显示出类似于热电子数据的斜率变化。从电导率数据的断裂上方计算出的活化能约为0.25ev。将层冷却至-70°C及以下会导致活化能增加约0.1 ev。

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《Journal of Applied Physics》 |1957年第9期|共4页
作者
Davey John E.;
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U. S. Naval Research Laboratory, Washington, D. C.;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Thermionic and Semiconducting Properties of [Ag]Cs2O, Ag, Cs

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