机译:半极性(1122)InGaN / GaN多量子阱结构中V形特征的阴极发光研究
Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland;
Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland;
Univ Sheffield, Dept Elect & Elect Engn, Sheffield SI 3JD, S Yorkshire, England;
Univ Sheffield, Dept Elect & Elect Engn, Sheffield SI 3JD, S Yorkshire, England;
Univ Sheffield, Dept Elect & Elect Engn, Sheffield SI 3JD, S Yorkshire, England;
Univ Strathclyde, Strathclyde Inst Pharm & Biomed Sci, Glasgow G4 0RE, Lanark, Scotland;
Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland;
Univ Sheffield, Dept Elect & Elect Engn, Sheffield SI 3JD, S Yorkshire, England;
Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland;
机译:半极性(1122)InGaN / GaN多量子阱中的斯托克斯位移
机译:在纳米棒模板上生长的(1122)半极性InGaN / GaN多量子阱的时空分辨光致发光研究
机译:InGaN / GaN多量子阱结构中表面特征的高分辨率阴极发光高光谱成像
机译:InGaN / GaN多量子阱和N型GaN结构的阴极发光研究
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:使用在空心n-GaN纳米线上形成的非极性同轴InGaN / GaN多量子阱结构产生氢
机译:InGaN / GaN多量子阱结构中表面特征的高分辨率阴极发光高光谱成像