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Cathodoluminescence studies of chevron features in semi-polar (1122) InGaN/GaN multiple quantum well structures

机译:半极性(1122)InGaN / GaN多量子阱结构中V形特征的阴极发光研究

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摘要

Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and electrical properties of these features occurring in two very different semi-polar structures, a blue-emitting multiple quantum well structure, and an amber-emitting light-emitting diode. Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the quantum wells (QWs) in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current. Overall, these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices. (C) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
机译:半极性III族氮化物层和器件的外延过度生长通常会导致箭头形的表面特征,即人字形。我们报告了对在两个截然不同的半极性结构,发蓝光的多量子阱结构和发黄光的发光二极管中出现的这些特征的光学,结构和电学性质的研究报告。阴极发光(CL)高光谱成像突出了在人字形区域发生的发射能量的变化。这些变化是由于在人字形臂中引入了不同的半极性平面所致,导致样品中InN掺入缺乏均匀性,并且结构的破坏可能导致该区域量子阱(QW)变窄。原子力显微镜显示人字形可以穿透150 nm以上的样品进入样品,并抑制活性层的发光。通过同时测量CL和电子束感应电流,暴露了人字形区域中非辐射复合的优势。总的来说,这些结果概述了人字形的本质及其对半极性器件发光的影响。 (C)2018作者。除非另有说明,否则所有文章内容均受知识共享署名(CC BY)许可。

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  • 来源
    《Journal of Applied Physics》 |2018年第17期|174502.1-174502.6|共6页
  • 作者单位

    Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland;

    Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland;

    Univ Sheffield, Dept Elect & Elect Engn, Sheffield SI 3JD, S Yorkshire, England;

    Univ Sheffield, Dept Elect & Elect Engn, Sheffield SI 3JD, S Yorkshire, England;

    Univ Sheffield, Dept Elect & Elect Engn, Sheffield SI 3JD, S Yorkshire, England;

    Univ Strathclyde, Strathclyde Inst Pharm & Biomed Sci, Glasgow G4 0RE, Lanark, Scotland;

    Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland;

    Univ Sheffield, Dept Elect & Elect Engn, Sheffield SI 3JD, S Yorkshire, England;

    Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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