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首页> 外文期刊>Journal of Applied Physics >Infrared blocking, microwave and terahertz low-loss transmission AIN films grown on flexible polymeric substrates
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Infrared blocking, microwave and terahertz low-loss transmission AIN films grown on flexible polymeric substrates

机译：在柔性聚合物基板上生长的红外阻挡，微波和太赫兹低损耗透射AIN膜

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摘要

Aluminum nitride (AIN) film coatings on flexible substrates (polymeric Teflon, Mylar) have been obtained using a hybrid helicon-arc ion-plasma deposition technique with high adhesion of coatings. Studies of optical, morphological, and structural properties of AIN films have been carried out. It was found that AIN coatings on Teflon and Mylar thin-film substrates substantially suppress transmission of infrared (IR) radiation within the spectral range λ ~ 5-20 μm at certain technological parameters and thickness of AIN. Transmission in THz regions by using quasioptics attains T≈79%-95%, and losses measured in the channels within the microwave region 2 to 36 GHz are <0.06 dB. The obtained composite structures (AIN coatings on Teflon and Mylar thin-film substrates), due to a high thermal conductivity of AIN, could be used as efficient blocking structures in the infrared spectral range ("infrared stealth") withdrawing the heat from filters warmed by IR radiation. At the same time, they can be used as the transparent ones in the microwave and THz regions, which can be important for low-temperature detector components of navigation, positioning, and telecommunication systems due to reducing the background noise.
机译：使用混合螺线弧电弧离子等离子体沉积技术，在柔性基材（聚合物特氟隆，聚酯薄膜）上获得了氮化铝（AIN）膜涂层，该涂层具有很高的附着力。已经对AIN膜的光学，形态和结构性质进行了研究。已经发现，在某些技术参数和AIN厚度下，特氟龙和聚酯薄膜薄膜基板上的AIN涂层在λ〜5-20μm光谱范围内基本上抑制了红外（IR）辐射的透射。使用准光学在太赫兹区域的传输达到T≈79％-95％，在2至36 GHz微波区域内的信道中测得的损耗<0.06 dB。由于AIN的高导热性，所获得的复合结构（特氟隆和Mylar薄膜基板上的AIN涂层）可以用作红外光谱范围（“红外隐身”）中的有效阻隔结构，从而从变暖的过滤器中吸收热量通过红外辐射。同时，它们可以在微波和太赫兹区域用作透明传感器，由于降低了背景噪声，对于导航，定位和电信系统的低温检测器组件而言，它们可能是重要的。

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  • 来源
    《Journal of Applied Physics》 |2017年第13期|135304.1-135304.8|共8页
  • 作者

    E. Rudenko; Z. Tsybrii; F. Sizov; I. Korotash; D. Polotskiy; M. Skoryk; M. Vuichyk; K. Svezhentsova;

  • 作者单位

    Institute for Metal Physics NAS of Ukraine, 03142 Kyiv, Ukraine;

    Institute of Semiconductor Physics NAS of Ukraine, 03028 Kyiv, Ukraine;

    Institute of Semiconductor Physics NAS of Ukraine, 03028 Kyiv, Ukraine;

    Institute for Metal Physics NAS of Ukraine, 03142 Kyiv, Ukraine;

    Institute for Metal Physics NAS of Ukraine, 03142 Kyiv, Ukraine;

    Institute for Metal Physics NAS of Ukraine, 03142 Kyiv, Ukraine;

    Institute of Semiconductor Physics NAS of Ukraine, 03028 Kyiv, Ukraine;

    Institute of Semiconductor Physics NAS of Ukraine, 03028 Kyiv, Ukraine;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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