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A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors

机译:用于二维GaN-on-SiC高电子迁移率晶体管电热研究的混合仿真技术

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摘要

In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon transport is considered by coupled electron and phonon Monte Carlo simulations in the transistor region. For regions away from the transistor, the conventional Fourier's law is used for thermal analysis to minimize the computational load. This hybrid simulation strategy can incorporate the physical phenomena over multiple length scales, including phonon generation by hot electrons in the conduction channel, frequency-dependent phonon transport in the transistor region, and heat transfer across the whole macroscale device.
机译:在这项工作中,引入了一种混合仿真技术,用于二维GaN-on-SiC高电子迁移率晶体管的电热研究。详细的电子和声子传输是通过晶体管区域中电子和声子的耦合蒙特卡洛模拟来考虑的。对于远离晶体管的区域,常规傅里叶定律用于热分析,以最大程度地减少计算负荷。这种混合仿真策略可以并入多种长度尺度的物理现象,包括传导通道中热电子产生的声子,晶体管区域中随频率变化的声子传输以及整个宏器件上的热传递。

著录项

  • 来源
    《Journal of Applied Physics》 |2017年第20期|204501.1-204501.8|共8页
  • 作者

    Qing Hao; Hongbo Zhao; Yue Xiao;

  • 作者单位

    Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, Arizona 85712, USA;

    Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, Arizona 85712, USA;

    Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, Arizona 85712, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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