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首页> 外文期刊>Journal of Applied Physics >Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction
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Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

机译：使用原位X射线衍射直接观察InAs量子点和盖层在分子束外延生长过程中的应变

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摘要

Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures.
机译：通过原位X射线衍射（XRD）对InAs量子点（QDs）和各种盖层在分子束外延过程中的生长进行直接测量。基于在各种晶格常数下获得的XRD强度瞬态，讨论了在封盖过程中在QD和盖层中引起的应变的演变。从InGaAs和GaAs封盖过程中获得的瞬态具有不同的特征。观察到的差异归因于在有限的In供应下QD与盖层之间的In-Ga混合。可以通过控制混合来调节光致发光（PL）波长，这既影响量子点中诱导的应变又影响势垒高度。 PL波长也随覆盖层厚度而变化。减小盖子厚度会发生较大的红移。 XRD的原位观察表明这是应变降低的结果。我们演示了如何将有关应变的此类信息应用于设计和准备新颖的设备结构。

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  • 来源
    《Journal of Applied Physics》 |2015年第18期|185303.1-185303.7|共7页
  • 作者

    Kenichi Shimomura; Hidetoshi Suzuki; Takuo Sasaki; Masamitu Takahasi; Yoshio Ohshita; Itaru Kamiya;

  • 作者单位

    Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;

    Faculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan;

    Quantum Beam Science Center, Japan Atomic Energy Agency, Koto 1-1-1, Sayo-cho, Hyogo 679-5148, Japan;

    Quantum Beam Science Center, Japan Atomic Energy Agency, Koto 1-1-1, Sayo-cho, Hyogo 679-5148, Japan;

    Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;

    Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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