Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

H. Yanagihara; Y. Utsumi; T. Niizeki; J. Inoue; Eiji Kita

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Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

机译：外延应变钴铁氧体（001）薄膜中的垂直磁各向异性

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We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of Co_xFe_(3-x)O_4(001) epitaxial films (x = 0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial anisotropy constant K_u are strongly dependent on the reactive gas (O_2) flow rate, although there is little difference in the surface structures for all samples observed by reflection high-energy electron diffraction. In addition, certain dead-layer-like regions were observed in the initial stage of the film growth for all films. Our results suggest that the magnetic properties of Co_xFe_(-x)O_4 epitaxial films are governed by the oxidation state and the film structure at the vicinity of the interface.

机译：我们研究了Co_xFe_（3-x）O_4（001）外延膜（x = 0.5和0.75）的磁化特性和垂直磁各向异性对反应磁控溅射工艺生长条件的依赖性。尽管通过反射高能电子衍射观察到的所有样品的表面结构几乎没有差异，但是饱和磁化强度和单轴磁性各向异性常数K_u都强烈依赖于反应气体（O_2）的流量。另外，对于所有膜，在膜生长的初期都观察到某些死层状区域。我们的结果表明，Co_xFe _（-x）O_4外延膜的磁性能受界面附近氧化态和膜结构的控制。

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来源
《Journal of Applied Physics》 |2014年第2期|17A719.1-17A719.3|共3页
作者
H. Yanagihara; Y. Utsumi; T. Niizeki; J. Inoue; Eiji Kita;
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作者单位

Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan;

Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan;

Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan;

Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan;

Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Erratum: “Extraordinarily large perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite CoxFe3−xO4(001) (x = 0.75, 1.0) thin films” [Appl. Phys. Lett. 103, 162407 (2013)] [J] . Applied Physics Letters . 2014,第5期

机译：勘误表：“外延应变的钴铁氧体CoxFe3-xO4（001）（x = 0.75，1.0）薄膜中的垂直磁各向异性非常大” [附录。物理来吧103，162407（2013）]
2. Extraordinarily large perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite CoxFe3-xO4(001) (x = 0.75, 1.0) thin films [J] . Niizeki Tomohiko, Utsumi Yuji, Aoyama Ryohei, Applied Physics Letters . 2013,第16期

机译：外延应变钴铁氧体CoxFe3-xO4（001）（x = 0.75，1.0）薄膜中的垂直磁各向异性非常大
3. Extraordinarily large perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite Co_xFe_(3-x)O_4(001) (x = 0.75,1.0) thin films [J] . Tomohiko Niizeki, Yuji Utsumi, Ryohei Aoyama, Applied Physics Letters . 2013,第16期

机译：外延应变钴铁氧体Co_xFe_（3-x）O_4（001）（x = 0.75,1.0）薄膜中的垂直磁各向异性非常大
4. Perpendicular magnetic anisotropy in CoFe_2O_4(001) films epitaxially grown on MgO(001) [C] . H. Yanagihara, K. Uwabo, M. Minagawa Annual Conference on Magnetism Magnetic Materials . 2011

机译：在MgO（001）上外延生长的CoFe_2O_4（001）膜中的垂直磁各向异性
5. Magnetic thin films with high perpendicular anisotropy for magnetic recording media applications. [D] . Zhao, Haibao. 2014

机译：具有高垂直各向异性的磁性薄膜，用于磁记录介质应用。
6. First-principles calculations of perpendicular magnetic anisotropy in Fe1−xCox/MgO(001) thin films [O] . Guanzhi Cai, Zhiming Wu, Fei Guo, 2015

机译：Fe1-xCox / MgO（001）薄膜中垂直磁各向异性的第一性原理计算
7. Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films [O] . Yanagihara H., Utsumi Y., Niizeki T., 2014

机译：外延应变钴铁氧体（001）薄膜中的垂直磁各向异性

Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

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