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Effect of temperature on the current (capacitance and conductance)-voltage characteristics of Ti-GaAs diode

机译:温度对Ti / n-GaAs二极管的电流(电容和电导)-电压特性的影响

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摘要

In this study, Ti-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current-voltage, capacitance-voltage, and conductance-voltage characteristics of Ti-GaAs diode have been investigated in the temperature range of 80-320 K. The ideality factor and barrier height values have been calculated from the forward current-voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance-voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = -0.65 meV K~(-1)). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.
机译:在这项研究中,Ti / n-GaAs肖特基势垒二极管是通过直流磁控溅射制造的。研究了Ti / n-GaAs二极管在80-320 K温度范围内的电流-电压,电容-电压和电导-电压特性。根据正向电流-电压计算了理想因子和势垒高度值特征。二极管参数随样品温度的变化已归因于势垒高度横向不均匀的存在。测量与温度有关的电容-电压特性,以计算载流子浓度,扩散电势,势垒高度和势垒高度的温度系数(α= -0.65 meV K〜(-1))。势垒高度的温度系数从金属到金属变化的事实已经归因于接触金属的化学性质或金属电负性。

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  • 来源
    《Journal of Applied Physics》 |2014年第23期|234503.1-234503.6|共6页
  • 作者单位

    Department of Electricity and Energy, Vocational High School of Technical Sciences, Bingol University, 12000 Bingol, Turkey;

    Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum, Turkey;

    Department of Physics, Faculty of Sciences, Yildiz Technical University, 34220 Istanbul, Turkey;

    Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum, Turkey;

    Department of Engineering Physics, Faculty of Sciences, Istanbul Medeniyet University, 34700 Istanbul, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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