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首页> 外文期刊>Journal of Applied Physics >Does the low hole transport mass in (110) and (111) Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study
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Does the low hole transport mass in (110) and (111) Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

机译：（110）和（111）Si纳米线中的低空穴传输质量是否会导致在高电场和高应力下迁移率增强：一项自洽的紧密结合研究

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摘要

The hole surface roughness and phonon limited mobility in the silicon (100), (110), and (111) square nanowires under the technologically important conditions of applied gate bias and stress are studied with the self-consistent Poisson-sp3d5s~*-SO tight-binding bandstructure method. Under an applied gate field, the hole carriers in a wire undergo a volume to surface inversion transition diminishing the positive effects of the high (110) and (111) valence band nonparabolicities, which are known to lead to the large gains of the phonon limited mobility at a zero field in narrow wires. Nonetheless, the hole mobility in the unstressed wires down to the 5 nm size remains competitive or shows an enhancement at high gate field over the large wire limit. Down to the studied 3 nm sizes, the hole mobility is degraded by strong surface roughness scattering in (100) and (110) wires. The (111) channels are shown to experience less surface scattering degradation. The physics of the surface roughness scattering dependence on wafer and channel orientations in a wire is discussed. The calculated uniaxial compressive channel stress gains of the hole mobility are found to reduce in the narrow wires and at the high field. This exacerbates the stressed mobility degradation with size. Nonetheless, stress gains of a factor of 2 are obtained for (110) wires down to 3 nm size at a 5 x 1012 cm"2 hole inversion density per gate area.
机译：使用自洽Poisson-sp3d5s〜* -SO研究了在施加重要的栅极偏压和应力的技术重要条件下，硅（100），（110）和（111）方形纳米线中的孔表面粗糙度和声子有限迁移率紧结合带结构法。在施加的栅极场下，导线中的空穴载流子经历体积到表面反转的过渡，从而减小了高（110）和（111）价带非抛物线的正效应，众所周知，这会导致声子有限的大增益窄导线在零场时的迁移率。尽管如此，在小于5 nm尺寸的无应力导线中，空穴迁移率仍具有竞争力，或者在高栅极电场下超过大型导线极限时仍显示出增强的能力。直到研究的3 nm尺寸，空穴迁移率都会因（100）和（110）导线中强烈的表面粗糙度散射而降低。 （111）通道显示较少的表面散射退化。讨论了表面粗糙度散射对导线中晶圆和通道方向的依赖性的物理原理。发现计算出的空穴迁移率的单轴压缩通道应力增益在窄导线和高场中减小。这加剧了压力迁移率随尺寸的降低。尽管如此，在每栅极面积5 x 1012 cm“ 2的孔反转密度下，对于尺寸小于3 nm的（110）线，获得了2倍的应力增益。

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  • 来源
    《Journal of Applied Physics》 |2012年第12期|p.123718.1-123718.11|共11页
  • 作者

    R. Kotlyar; T. D. Linton; R. Rios; M. D. Giles; S. M. Cea; K. J. Kuhn; Michael Povolotskyi; Tillmann Kubis; Gerhard Klimeck;

  • 作者单位

    Process Technology Modeling, Intel Corporation, 2501 NW 229th Ave., Hillsboro, Oregon 97124, USA;

    Process Technology Modeling, Intel Corporation, 2501 NW 229th Ave., Hillsboro, Oregon 97124, USA;

    Component Research, Intel Corporation, 2501 NW 229th Ave., Hillsboro, Oregon 97124, USA;

    Process Technology Modeling, Intel Corporation, 2501 NW 229th Ave., Hillsboro, Oregon 97124, USA;

    Process Technology Modeling, Intel Corporation, 2501 NW 229th Ave., Hillsboro, Oregon 97124, USA;

    Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47906, USA;

    Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47906, USA;

    Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47906, USA;

    Process Technology Modeling, Intel Corporation, 2501 NW 229th Ave., Hillsboro, Oregon 97124, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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